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HFU2N65のメーカーはSemiHowです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | HFU2N65 |
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部品説明 | N-Channel MOSFET | ||
メーカ | SemiHow | ||
ロゴ | |||
このページの下部にプレビューとHFU2N65ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Nov 2008
HFU2N65
650V N-Channel MOSFET
BVDSS = 650 V
RDS(on) typ = 4.5 Ω
ID = 1.6 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 9.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 4.5 Ω (Typ.) @VGS=10V
100% Avalanche Tested
I-PAK
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
1.6
1.0
6.4
±30
120
1.6
4.4
5.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25℃) *
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
44
0.35
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
Typ.
--
--
--
Max.
2.87
50
110
Units
℃/W
◎ SEMIHOW REV.A0,Nov 2008
1 Page Typical Characteristics
Top :
100
Bottom :
VGS
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10-1
10-2
10-1
* Note :
1. 250탎 Pulse Test
2. TC = 25oC
100 101
VDS , Drain-Source Voltage [V]
Figure 1. On Region Characteristics
18
15
VGS = 10V
12 VGS = 20V
9
6
3
* Note : TJ = 25oC
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
ID , Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
450
400
350
300
250
200
150
100
50
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 130V
VDS = 325V
8 VDS = 520V
6
4
2
* Note : I = 1.8 A
D
0
0 1 2 3 4 5 6 7 8 9 10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Nov 2008
3Pages Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--uu--ll-ss-ee---PW--e-id-r-ito-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
◎ SEMIHOW REV.A0,Nov 2008
6 Page | |||
ページ | 合計 : 7 ページ | ||
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