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Número de pieza | HFH19N60 | |
Descripción | N-Channel MOSFET | |
Fabricantes | SemiHow | |
Logotipo | ||
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HFH19N60
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ ȍ
ID = 18.5 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 95 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
18.5
11.7
74
ρͤ͡
1150
18.5
30
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25ఁ͚
͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
2.38
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/ఁ
ఁ
ఁ
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.42
--
40
Units
ఁ͠Έ
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ʹ΅͑ͣͪ͡͡
1 page Fig 12. Gate Charge Test Circuit & Waveform
Same Type
.ȍ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ʹ΅͑ͣͪ͡͡
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet HFH19N60.PDF ] |
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HFH19N60 | N-Channel MOSFET | SemiHow |
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