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PDF HFP12N60S Data sheet ( Hoja de datos )
| Número de pieza | HFP12N60S | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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Nov 2007
HFP12N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ = 0.53 ȍ
ID = 12 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 38 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.53 ȍ (Typ.) @VGS=10V
100% Avalanche Tested
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
12
7.4
48
ρ30
870
12
22.5
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
225
1.78
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.56
--
62.5
Units
/W
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͨ͡͡
1 page  
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50K
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
Vin 10%
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͨ͡͡
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HFP12N60S.PDF ] | |
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