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HFP10N60SのメーカーはSemiHowです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | HFP10N60S |
| |
部品説明 | N-Channel MOSFET | ||
メーカ | SemiHow | ||
ロゴ | |||
このページの下部にプレビューとHFP10N60Sダウンロード(pdfファイル)リンクがあります。 Total 8 pages
Nov 2007
HFP10N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ = 0.67 Ω
ID = 9.5 A
FEATURES
q Originative New Design
q Superior Avalanche Rugged Technology
q Robust Gate Oxide Technology
q Very Low Intrinsic Capacitances
q Excellent Switching Characteristics
q Unrivalled Gate Charge : 29 nC (Typ.)
q Extended Safe Operating Area
q Lower RDS(ON) : 0.67 Ω (Typ.) @VGS=10V
q 100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
9.5
5.7
38
±30
700
9.5
15.6
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
156
1.25
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.8
--
62.5
Units
℃/W
◎ SEMIHOW REV.A0,Nov 2007
1 Page Typical Characteristics
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
2.0
1.5 VGS = 10V
1.0
VGS = 20V
0.5
* Note : TJ = 25oC
0.0
0 5 10 15 20 25 30 35
I , Drain Current[A]
D
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
Ciss Crss = Cgd
2000
1500
1000
500
C
oss
∗ Note ;
Crss
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 120V
10
VDS = 300V
8 VDS = 480V
6
4
2
* Note : I = 9.5A
D
0
0 4 8 12 16 20 24 28 32
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Nov 2007
3Pages Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
◎ SEMIHOW REV.A0,Nov 2007
6 Page | |||
ページ | 合計 : 8 ページ | ||
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