DataSheet.jp

HFP5N60S の電気的特性と機能

HFP5N60SのメーカーはSemiHowです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HFP5N60S
部品説明 N-Channel MOSFET
メーカ SemiHow
ロゴ SemiHow ロゴ 




このページの下部にプレビューとHFP5N60Sダウンロード(pdfファイル)リンクがあります。
Total 8 pages

No Preview Available !

HFP5N60S Datasheet, HFP5N60S PDF,ピン配置, 機能
Aug 2007
HFP5N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ ȍ
ID = 4.5 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 10.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
4.5
2.6
18
ρ30
210
4.5
10
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
100
0.8
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.25
--
62.5
Units
ఁ͠Έ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΦΘ͑ͣͨ͡͡

1 Page





HFP5N60S pdf, ピン配列
Typical Characteristics
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
6
5
VGS = 10V
4
3
2 VGS = 20V
1
* Note : TJ = 25oC
0
0 2 4 6 8 10
ID , Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1000
800
600
400
200
C
iss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Note ;
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100 -55oC
10-1
2
* Note
1. V = 50V
DS
2. 250Ps Pulse Test
468
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
101
100
150oC
25oC
10-1
0.2
* Note :
1. VGS = 0V
2. 250Ps Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD , Source-Drain Voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 120V
VDS = 300V
8 VDS = 480V
6
4
2
* Note : ID = 4.5A
0
0 2 4 6 8 10 12
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΦΘ͑ͣͨ͡͡


3Pages


HFP5N60S 電子部品, 半導体
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΦΘ͑ͣͨ͡͡

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ HFP5N60S データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
HFP5N60F

600V N-Channel MOSFET

SemiHow
SemiHow
HFP5N60S

N-Channel MOSFET

SemiHow
SemiHow
HFP5N60U

N-Channel MOSFET

SemiHow
SemiHow


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap