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HFH18N50S の電気的特性と機能

HFH18N50SのメーカーはSemiHowです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HFH18N50S
部品説明 N-Channel MOSFET
メーカ SemiHow
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HFH18N50S Datasheet, HFH18N50S PDF,ピン配置, 機能
Nov 2009
HFH18N50S
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on) typ = 0.220ȍ
ID = 19 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 52 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.220 ȍ (Typ.) @VGS=10V
‰ 100% Avalanche Tested
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
19
11.4
76
ρ30
945
19
23
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
239
1.92
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.52
--
40
Units
/W
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͪ͡͡

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HFH18N50S pdf, ピン配列
Typical Characteristics
VDS, Drain-Source Voltage[V]
Figure 1. On Region Characteristics
0.7
0.6
V = 10V
GS
0.5
0.4
V = 20V
GS
0.3
0.2
0.1
0
Note : T = 25oC
J
10 20 30 40 50 60 70
I , Drain Current [A]
D
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
5000
4000
3000
2000
1000
C
iss
C
oss
C
rss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
* Note ;
1. V = 0 V
GS
2. f = 1 MHz
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage[V]
Figure 2. Transfer Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 V = 100V
DS
V = 250V
DS
8 V = 400V
DS
6
4
2
Note : I = 19A
D
0
0 10 20 30 40 50 60
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
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3Pages


HFH18N50S 電子部品, 半導体
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---id--t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͪ͡͡

6 Page



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HFH18N50S

N-Channel MOSFET

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