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HFI9N50 の電気的特性と機能

HFI9N50のメーカーはSemiHowです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HFI9N50
部品説明 N-Channel MOSFET
メーカ SemiHow
ロゴ SemiHow ロゴ 




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HFI9N50 Datasheet, HFI9N50 PDF,ピン配置, 機能
June 2005
HFW9N50 / HFI9N50
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on) typ = 0.58 Ω
ID = 9.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 35 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.58 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D2-PAK I2-PAK
HFW9N50
HFI9N50
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
9.0
5.7
36
±30
360
9.0
14.7
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25) *
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
3.13
147
1.18
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.85
40
62.5
Units
℃/W
SEMIHOW REV.A0 June 2005

1 Page





HFI9N50 pdf, ピン配列
Typical Characteristics
Top :
VGS
15 V
10 V
101
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
Note :
1. 250μ s Pulse Test
2. TC = 25
100 101
VDS , Drain-Source Voltage [V]
Figure 1. On Region Characteristics
1.8
1.6
VGS = 10V
1.4
1.2 VGS = 20V
1.0
0.8
0.6
Note
:
T
J
=
25
0.4
0 5 10 15 20 25 30
ID , Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2400
1800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C Crss = Cgd
iss
1200
Coss
Note ;
600
Crss
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
2
150
25
-55
Note
1. VDS = 40V
2. 250μ s Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
0.4
25
Note :
1. VGS = 0V
2. 250μ s Pulse Test
0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 100V
10 VDS = 250V
VDS = 400V
8
6
4
2
Note
:
I
D
=
9.0
A
0
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
SEMIHOW REV.A0 June 2005


3Pages


HFI9N50 電子部品, 半導体
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
SEMIHOW REV.A0 June 2005

6 Page



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部品番号部品説明メーカ
HFI9N50

N-Channel MOSFET

SemiHow
SemiHow


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