|
|
PDF HFW5N50S Data sheet ( Hoja de datos )
| Número de pieza | HFW5N50S | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HFW5N50S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
June 2009
HFW5N50S / HFI5N50S
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on) typ = 1.2 Ω
ID = 5.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 15.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 1.2 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D2-PAK I2-PAK
HFW5N50S HFI5N50S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
5.0
2.9
20
±30
300
5.0
7.3
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25℃) *
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
3.13
73
0.58
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.71
40
62.5
Units
℃/W
◎ SEMIHOW REV.A0 June 2009
1 page  
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
◎ SEMIHOW REV.A0 June 2009
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HFW5N50S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HFW5N50S | N-Channel MOSFET | SemiHow |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |