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Número de pieza | HFW50N06 | |
Descripción | 60V N-Channel MOSFET | |
Fabricantes | SemiHow | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HFW50N06 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Nov 2009
HFW50N06 / HFI50N06
60V N-Channel MOSFET
BVDSS = 60 V
RDS(on) = 18 mΩ
ID = 50 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 40 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D2-PAK I2-PAK
HFW50N06 HFI50N06
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
60
50
35.4
200
ρ25
490
50
12
7.0
PD
TJ, TSTG
TL
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
3.75
120
0.8
-55 to +175
300
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient*
RθJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.24
40
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Units
/W
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͪ͡͡
1 page Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
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5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HFW50N06.PDF ] |
Número de pieza | Descripción | Fabricantes |
HFW50N06 | 60V N-Channel MOSFET | SemiHow |
HFW50N06A | N-Channel MOSFET | SemiHow |
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