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PDF HFW640 Data sheet ( Hoja de datos )
| Número de pieza | HFW640 | |
| Descripción | 200V N-Channel MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HFW640 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Mar 2008
HFW640 / HFI640
200V N-Channel MOSFET
BVDSS = 200 V
RDS(on) typ = 0.145Ω
ID = 18 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 37 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.145 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D2-PAK I2-PAK
2
1
3
HFW640
1
2
3
HFI640
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
200
18
11.4
72
±30
250
18
13.9
5.5
PD Power Dissipation (TA = 25℃)
Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
3.13
139
1.11
-55 to +150
300
Symbol
RθJC
Rθ JA
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
Typ.
--
--
--
Max.
0.9
40
62.5
* When mounted on the minimum pad size recommended (PCB Mount)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Units
℃/W
◎ SEMIHOW REV.A0,Mar 2008
1 page  
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
◎ SEMIHOW REV.A0,Mar 2008
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HFW640.PDF ] | |
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