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Número de pieza | ME9926-G | |
Descripción | Dual N-Channel 20V (D-S) MOSFET | |
Fabricantes | Matsuki | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ME9926-G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Dual N-Channel 20V (D-S) MOSFET
ME9926/ME9926-G
GENERAL DESCRIPTION
The ME9926 is the Dual N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where switching and low in-line power loss are needed in a very
small outline surface mount package.
FEATURES
● RDS(ON)≦29mΩ@VGS=4.5V
● RDS(ON)≦42mΩ@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC
PIN CONFIGURATION
(SOP-8)
Top View
e Ordering Information: ME9926 (Pb-free)
ME9926-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
Pulsed Drain Current
Maximum Power Dissipation*
Operating Junction Temperature
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
10sec
SteadyState
20
±12
6.6 5.2
5.2 4.2
30
2.0 1.25
1.2 0.8
-55 to 150
Typ 45 Typ 80
Max 62.5 Max 100
e * The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃
℃/W
Feb, 2009-Ver1.2
01
1 page Dual N-Channel 20V (D-S) MOSFET
ME9926/ME9926-G
SOP-8 Package Outline
DIM
A
A1
B
C
D
E
e
H
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
L
θ
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
MILLIMETERS (mm)
MIN MAX
1.35
1.75
0.10 0.25
0.35
0.49
0.18
0.25
4.80
5.00
3.80
4.00
1.27 BSC
5.80
6.20
0.40
1.25
0° 7°
Feb, 2009-Ver1.2
05
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet ME9926-G.PDF ] |
Número de pieza | Descripción | Fabricantes |
ME9926-G | Dual N-Channel 20V (D-S) MOSFET | Matsuki |
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