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IXTP18P10T の電気的特性と機能

IXTP18P10TのメーカーはIXYSです、この部品の機能は「Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTP18P10T
部品説明 Power MOSFETs
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTP18P10T Datasheet, IXTP18P10T PDF,ピン配置, 機能
TrenchPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTY18P10T
IXTA18P10T
IXTP18P10T
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Maximum Ratings
-100
-100
V
V
±15 V
±25 V
-18 A
- 60 A
-18 A
200 mJ
83 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13 / 10
°C
°C
Nm/lb.in.
0.35 g
2.50 g
3.00 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ± 15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.5
- 4.5 V
±50 nA
- 3 μA
-100 μA
120 mΩ
VDSS =
ID25 =
RDS(on)
-100V
-18A
120mΩ
TO-252 (IXTY)
G
S
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
© 2013 IXYS CORPORATION, All Rights Reserved
DS99966C(01/13)

1 Page





IXTP18P10T pdf, ピン配列
IXTY18P10T IXTA18P10T
IXTP18P10T
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0.0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = -10V
- 9V
- 8V
- 7V
- 6V
- 5V
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8
VDS - Volts
-2.0
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0.0
Fig. 3. Output Characteristics @ TJ = 125ºC
VGS = -10V
- 9V
- 8V
- 7V
- 6V
- 5V
-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = - 9A Value vs.
Drain Current
2.4
2.2 VGS = -10V
2.0 TJ = 125ºC
1.8
1.6
1.4 TJ = 25ºC
1.2
1.0
0.8
0
-5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
-70
VGS = -10V
-60 - 9V
-50
- 8V
-40
-30 - 7V
- 6V
-20
-10
0
0
- 5V
-5 -10 -15 -20 -25 -30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = - 9A Value vs.
Junction Temperature
2.1
1.9 VGS = -10V
1.7
I D = -18A
1.5 I D = - 9A
1.3
1.1
0.9
0.7
0.5
-50
-25
0 25 50 75
TJ - Degrees Centigrade
100 125
150
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150
© 2013 IXYS CORPORATION, All Rights Reserved


3Pages


IXTP18P10T 電子部品, 半導体
IXTY18P10T IXTA18P10T
IXTP18P10T
Fig. 19. Maximum Transient Thermal Impedance
10
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_18P10T(A1)11-05-10-A

6 Page



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部品番号部品説明メーカ
IXTP18P10T

Power MOSFETs

IXYS
IXYS


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