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PDF IXTX5N250 Data sheet ( Hoja de datos )
| Número de pieza | IXTX5N250 | |
| Descripción | High Voltage Power MOSFETs | |
| Fabricantes | IXYS | |
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Advance Technical Information
High Voltage Power
MOSFET w/ Extended
FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Guaranteed FBSOA
IXTK5N250
IXTX5N250
VDSS
ID25
RDS(on)
= 2500V
= 5A
< 8.8Ω
TO-264 (IXTK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
2500
2500
V
V
±30 V
±40 V
5A
20 A
2.5 A
2.5 J
960 W
-55 to +150
150
-55 to +150
300
260
°C
°C
°C
°C
°C
1.13/10
20..120 /4.5..27
Nm/lb.in.
N/lb.
10 g
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = 2kV, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
2500
V
2.0 5.0 V
±200 nA
50 μA
4 mA
8.8 Ω
G
D
S
PLUS247 (IXTX)
Tab
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Avalanche Rated
z Fast Intrinsic Diode
z Guaranteed FBSOA at 75°C
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
Applications
z High Voltage Power Supplies
z Capacitor Discharge
z Pulse Circuits
© 2010 IXYS CORPORATION, All Rights Reserved
DS100280(08/10)
1 page  
IXTK5N250
IXTX5N250
Fig. 12. Maximum Transient Thermal Impedance
1.000
Fig. 13. Maximum Transient Thermal Impedance
0.300
aaaaaa
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXT_5N250(9P)8-13-10-A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTX5N250.PDF ] | |
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