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IXTK5N250 の電気的特性と機能

IXTK5N250のメーカーはIXYSです、この部品の機能は「High Voltage Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTK5N250
部品説明 High Voltage Power MOSFETs
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTK5N250 Datasheet, IXTK5N250 PDF,ピン配置, 機能
Advance Technical Information
High Voltage Power
MOSFET w/ Extended
FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Guaranteed FBSOA
IXTK5N250
IXTX5N250
VDSS
ID25
RDS(on)
= 2500V
= 5A
< 8.8Ω
TO-264 (IXTK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
2500
2500
V
V
±30 V
±40 V
5A
20 A
2.5 A
2.5 J
960 W
-55 to +150
150
-55 to +150
300
260
°C
°C
°C
°C
°C
1.13/10
20..120 /4.5..27
Nm/lb.in.
N/lb.
10 g
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = 2kV, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
2500
V
2.0 5.0 V
±200 nA
50 μA
4 mA
8.8 Ω
G
D
S
PLUS247 (IXTX)
Tab
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Avalanche Rated
z Fast Intrinsic Diode
z Guaranteed FBSOA at 75°C
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
Applications
z High Voltage Power Supplies
z Capacitor Discharge
z Pulse Circuits
© 2010 IXYS CORPORATION, All Rights Reserved
DS100280(08/10)

1 Page





IXTK5N250 pdf, ピン配列
IXTK5N250
IXTX5N250
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
5V
4V
3V
5 10 15 20 25 30 35
VDS - Volts
Fig. 3. RDS(on) Normalized to ID = 2.5A Value vs.
Junction Temperature
3.0
VGS = 10V
2.6
2.2
1.8
I D = 5A
1.4 I D = 2.5A
1.0
0.6
0.2
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 5. Maximum Drain Current vs.
Case Temperature
6
5
4
3
2
1
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
Fig. 2. Output Characteristics @ TJ = 125ºC
2.5
2 VGS = 10V
4V
1.5
1
0.5 3V
0
0 5 10 15 20 25 30 35
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs.
Drain Current
2.6
2.4 VGS = 10V
2.2 TJ = 125ºC
2.0
1.8
1.6
1.4
1.2
TJ = 25ºC
1.0
0.8
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
ID - Amperes
5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
2.0
Fig. 6. Input Admittance
TJ = 125ºC
25ºC
- 40ºC
2.5 3.0 3.5 4.0 4.5 5.0
VGS - Volts
© 2010 IXYS CORPORATION, All Rights Reserved


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部品番号部品説明メーカ
IXTK5N250

High Voltage Power MOSFETs

IXYS
IXYS


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