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BTS50085-1TMBのメーカーはInfineon Technologiesです、この部品の機能は「Smart High-side High Current Power Switch」です。 |
部品番号 | BTS50085-1TMB |
| |
部品説明 | Smart High-side High Current Power Switch | ||
メーカ | Infineon Technologies | ||
ロゴ | |||
このページの下部にプレビューとBTS50085-1TMBダウンロード(pdfファイル)リンクがあります。 Total 18 pages
PROFET® Data Sheet BTS50085-1TMB
Smart Highside High Current Power Switch
Reversave
Product Summary
• Reverse battery protection by self turn on of
power MOSFET
Features
• Overload protection
• Current limitation
• Short circuit protection
• Over temperature protection
• Over voltage protection (including load dump)
• Clamp of negative voltage at output
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(AZ)
VON(CL)
Vbb(on)
RON
IL(ISO)
IL(SC)
IL : IIS
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Diagnostic feedback with load current sense
• Open load detection via current sense
PG-TO220-7-11
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
• Green product (RoHS compliant)
• AEC qualified
7
Application
• Power switch with current sense diagnostic
1
Standard
feedback for up to 48 V DC grounded loads
• Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
70
62
5.0 ... 58
9
44
90
13 000
V
V
V
mΩ
A
A
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protection functions.
Voltage
source
Voltage
sensor
3 IN
ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT 1,2,6,7
IL
Load
I IN Temperature
sensor
VIN
V IS
Logic GND
I IS
IS
5
RIS
PROFET
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1
2008-Jan-24
1 Page Data Sheet BTS50085-1TMB
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC7)
junction - ambient (free air): RthJA
SMD version, device on PCB 8):
Values
min typ max
-- -- 0.75
-- 60
--
-- 33
--
Unit
K/W
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified
Symbol
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7, see
measurement circuit page 7)
IL = 20 A, Tj = 25 °C: RON
VIN = 0, IL = 20 A, Tj = 150 °C:
IL = 80 A, Tj = 150 °C:
Vbb =6V, IL =20A, Tj =150°C:
Nominal load current 9) (Tab to pins 1,2,6,7)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 10)
Nominal load current 9), device on PCB 8)
TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V,
Maximum load current in resistive range
(Tab to pins 1,2,6,7)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 13
VON = 1.8 V, Tc = 150 °C:
Turn-on time 11)
IIN to 90% VOUT:
Turn-off time
IIN to 10% VOUT:
RL = 1 Ω , Tj =-40...+150°C
Slew rate on 11) (10 to 30% VOUT )
RL = 1 Ω
Slew rate off 11) (70 to 40% VOUT )
RL = 1 Ω
RON(Static)
IL(ISO)
IL(NOM)
IL(Max)
ton
toff
dV/dton
-dV/dtoff
-- 7.2
14.6
--
17
38 44
9 mΩ
17
17
22
-- A
9.9 11.1
185 --
105 --
50 --
30 --
--
--
--
400
110
A
A
µs
1.0 1.5 2.2 V/µs
1.1 1.9 2.6 V/µs
7) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
8) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
9) not subject to production test, specified by design
10) TJ is about 105°C under these conditions.
11) See timing diagram on page 14.
Infineon Technologies AG
Page 3
2008-Jan-24
3Pages Data Sheet BTS50085-1TMB
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified
Symbol
Values
Unit
min typ max
Diagnostic Characteristics
Current sense ratio,
static on-condition,
kILIS = IL : IIS,
VON < 1.5 V 19),
VIS <VOUT - 5 v,
VbIN > 4.0 V
see diagram on page 12
IL = 80 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 20 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 10 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 4 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IIN = 0, IIS=0 (e.g. during deenergizing of inductive loads):
Sense current saturation
Current sense leakage current
IIN = 0
VIN = 0, IL < 0:
Current sense over voltage protection Tj =-40°C:
Ibb = 15 mA
Tj = 25...+150°C:
Current sense settling time 20)
kILIS
IIS,lim
IIS(LL)
IIS(LH)
VbIS(Z)
ts(IS)
11 400 13 000 15 400
11 400 13 000 14 600
11 000 13 000 14 200
11 000 13 000 16 000
11 000 13 000 15 000
11 000 13 000 14 500
10 500 13 000 17 000
10 500 13 000 15 500
11 000 13 000 15 000
9 000 13 000 22 000
10 000 13 000 18 500
10 800 13 000 16 000
-- -- --
6.5 -- --
-- -- 0.5
-- 2 65
68 --
70 72
--
--
-- -- 500
mA
µA
V
µs
Input
Input and operating current (see diagram page 13)
IN grounded (VIN = 0)
Input current for turn-off 21)
IIN(on)
IIN(off)
-- 0.8 1.5 mA
-- -- 80 µA
19) If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
20) not subject to production test, specified by design
21) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than
500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
Infineon Technologies AG
Page 6
2008-Jan-24
6 Page | |||
ページ | 合計 : 18 ページ | ||
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部品番号 | 部品説明 | メーカ |
BTS50085-1TMA | Smart High-side High Current Power Switch | Infineon Technologies |
BTS50085-1TMB | Smart High-side High Current Power Switch | Infineon Technologies |