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PDF A1296 Data sheet ( Hoja de datos )
| Número de pieza | A1296 | |
| Descripción | PNP Transistor - 2SA1296 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de A1296 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1296
Power Amplifier Applications
Power Switching Applications
2SA1296
Unit: mm
• Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A
• Complementary to 2SC3266.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −20 V
Collector-emitter voltage
VCEO −20 V
Emitter-base voltage
VEBO −6 V
Collector current
IC −2 A
Base current
IB −0.5 A
Collector power dissipation
Junction temperature
Storage temperature range
PC 750 mW
Tj 150 °C
Tstg
−55~150
°C
JEDEC
JEITA
TO-92
SC-43
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5F1B
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.21 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = −20 V, IE = 0
IEBO
VEB = −6 V, IC = 0
V (BR) CEO IC = −10 mA, IB = 0
V (BR) EBO IE = −0.1 mA, IC = 0
hFE (1)
(Note)
VCE = −2 V, IC = −0.1 A
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = −2 V, IC = −2 A
IC = −2 A, IB = −0.1 A
VCE = −2 V, IC = −0.1 A
VCE = −2 V, IC = −0.5 A
VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE (1) Y: 120~240, GR: 200~400
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
−20 ⎯
⎯
V
−6 ⎯ ⎯
V
120 ⎯ 400
40 ⎯ ⎯
⎯ ⎯ −0.5 V
⎯ ⎯ −0.85 V
⎯ 120 ⎯ MHz
⎯ 40 ⎯ pF
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet A1296.PDF ] | |
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