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ITS4142NのメーカーはInfineonです、この部品の機能は「Smart High-Side Power Switch」です。 |
部品番号 | ITS4142N |
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部品説明 | Smart High-Side Power Switch | ||
メーカ | Infineon | ||
ロゴ | |||
このページの下部にプレビューとITS4142Nダウンロード(pdfファイル)リンクがあります。 Total 19 pages
Smart High-Side Power Switch
for Industrial Applications
1 Channel: 1 x 200mΩ
ITS 4142N
Features
• Short circuit protection
• Current limitation
• Overload protection
• Overvoltage protection
(including load dump)
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Operating temperature
• Undervoltage shutdown with auto-
restart and hysteresis
• Switching inductive loads
• Clamp of negative voltage at output
with inductive loads
• CMOS compatible input
• Thermal shutdown with restart
• ESD - Protection
• Loss of GND and loss of Vbb protection
• Very low standby current
• Reverse battery protection with external resistor
• Improved electromagnetic compatibility (EMC)
Vbb(AZ)
Vbb(on)
RON
Ta
47 V
12...45 V
200 mΩ
-30...+85 °C
PG-SOT223
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC industrial applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Page 1
2006-03-09
1 Page ITS 4142N
Maximum Ratings
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Supply voltage
Continuous input voltage2)
Load current (Short - circuit current, see page 5)
Current through input pin (DC)
Reverse current through GND-pin3)
Junction temperature
Vbb
VIN
IL
IIN
-IGND
Tj
Operating temperature
Ta
Storage temperature
Power dissipation 4)
Inductive load switch-off energy dissipation4)5)
single pulse
Tstg
Ptot
EAS
Tj = 125 °C, IL = 1 A
Load dump protection5) VLoadDump6)= VA + VS
RI=2Ω, td=400ms, VIN= low or high, VA=13,5V
RL = 47 Ω
VLoaddump
Electrostatic discharge voltage (Human Body Model) VESD
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
All other pins
Value
Unit
-0,31)...48
-10...Vbb
self limited
±5
-0.5
internal limited
-30...+85
-40 ... +105
1.4
0.16
V
A
mA
A
°C
°C
°C
W
J
V
83
kV
±1
±5
1defined by Ptot
2At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
3defined by Ptot
4Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
5not subject to production test, specified by design
6VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
Page 3
2006-03-09
3Pages ITS 4142N
Electrical Characteristics
Parameter
Symbol
at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified
Input
Continuous input voltage1)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current
VIN ≤ 1,8 V
VIN
VIN(T+)
VIN(T-)
∆VIN(T)
IIN(off)
On state input current
Input delay time at switch on Vbb
Input resistance (see page 8)
IIN(on)
td(Vbbon)
RI
Reverse Battery
Reverse battery voltage3)2)
RGND = 0 Ω
RGND = 150 Ω
Continuous reverse drain current2)
Tj = 25 °C
Drain-source diode voltage (VOUT > Vbb)
IF = 1 A
-Vbb
IS
-VON
Values
Unit
min. typ. max.
-102)
-
1.82
-
-
-
-
0.2
20 -
--
150 340
1.5 3
Vbb V
3.0
-
-
µA
-
110
- µs
5 kΩ
V
- - 0.3
- - 45
- - 1A
- 0.6 1.2 V
1At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
2not subject to production test, guaranted by design
3defined by Ptot
Page 6
2006-03-09
6 Page | |||
ページ | 合計 : 19 ページ | ||
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PDF ダウンロード | [ ITS4142N データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
ITS4142N | Smart High-Side Power Switch | Infineon |