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ITS4142N の電気的特性と機能

ITS4142NのメーカーはInfineonです、この部品の機能は「Smart High-Side Power Switch」です。


製品の詳細 ( Datasheet PDF )

部品番号 ITS4142N
部品説明 Smart High-Side Power Switch
メーカ Infineon
ロゴ Infineon ロゴ 




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ITS4142N Datasheet, ITS4142N PDF,ピン配置, 機能
Smart High-Side Power Switch
for Industrial Applications
1 Channel: 1 x 200m
ITS 4142N
Features
Short circuit protection
Current limitation
Overload protection
Overvoltage protection
(including load dump)
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Operating temperature
Undervoltage shutdown with auto-
restart and hysteresis
Switching inductive loads
Clamp of negative voltage at output
with inductive loads
CMOS compatible input
Thermal shutdown with restart
ESD - Protection
Loss of GND and loss of Vbb protection
Very low standby current
Reverse battery protection with external resistor
Improved electromagnetic compatibility (EMC)
Vbb(AZ)
Vbb(on)
RON
Ta
47 V
12...45 V
200 m
-30...+85 °C
PG-SOT223
Application
All types of resistive, inductive and capacitive loads
µC compatible power switch for 12 V and 24 V DC industrial applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOStechnology.
Providing embedded protective functions.
Page 1
2006-03-09

1 Page





ITS4142N pdf, ピン配列
ITS 4142N
Maximum Ratings
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Supply voltage
Continuous input voltage2)
Load current (Short - circuit current, see page 5)
Current through input pin (DC)
Reverse current through GND-pin3)
Junction temperature
Vbb
VIN
IL
IIN
-IGND
Tj
Operating temperature
Ta
Storage temperature
Power dissipation 4)
Inductive load switch-off energy dissipation4)5)
single pulse
Tstg
Ptot
EAS
Tj = 125 °C, IL = 1 A
Load dump protection5) VLoadDump6)= VA + VS
RI=2, td=400ms, VIN= low or high, VA=13,5V
RL = 47
VLoaddump
Electrostatic discharge voltage (Human Body Model) VESD
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
All other pins
Value
Unit
-0,31)...48
-10...Vbb
self limited
±5
-0.5
internal limited
-30...+85
-40 ... +105
1.4
0.16
V
A
mA
A
°C
°C
°C
W
J
V
83
kV
±1
±5
1defined by Ptot
2At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
3defined by Ptot
4Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
5not subject to production test, specified by design
6VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a
150resistor in GND connection. A resistor for the protection of the input is integrated.
Page 3
2006-03-09


3Pages


ITS4142N 電子部品, 半導体
ITS 4142N
Electrical Characteristics
Parameter
Symbol
at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified
Input
Continuous input voltage1)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current
VIN 1,8 V
VIN
VIN(T+)
VIN(T-)
VIN(T)
IIN(off)
On state input current
Input delay time at switch on Vbb
Input resistance (see page 8)
IIN(on)
td(Vbbon)
RI
Reverse Battery
Reverse battery voltage3)2)
RGND = 0
RGND = 150
Continuous reverse drain current2)
Tj = 25 °C
Drain-source diode voltage (VOUT > Vbb)
IF = 1 A
-Vbb
IS
-VON
Values
Unit
min. typ. max.
-102)
-
1.82
-
-
-
-
0.2
20 -
--
150 340
1.5 3
Vbb V
3.0
-
-
µA
-
110
- µs
5 k
V
- - 0.3
- - 45
- - 1A
- 0.6 1.2 V
1At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
2not subject to production test, guaranted by design
3defined by Ptot
Page 6
2006-03-09

6 Page



ページ 合計 : 19 ページ
 
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共有リンク

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部品番号部品説明メーカ
ITS4142N

Smart High-Side Power Switch

Infineon
Infineon


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