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ITS410E2のメーカーはInfineonです、この部品の機能は「Smart High-Side Power Switch」です。 |
部品番号 | ITS410E2 |
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部品説明 | Smart High-Side Power Switch | ||
メーカ | Infineon | ||
ロゴ | |||
このページの下部にプレビューとITS410E2ダウンロード(pdfファイル)リンクがあります。 Total 15 pages
PROFET® ITS 410 E2
Smart Highside Power Switch
for Industrial Applications
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Operating temperature
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
Ta
65 V
4.7 ... 42 V
220 mΩ
1.8 A
5A
-30…+85 °C
PG-TO220AB/5
5
Standard
5
1
Straight leads
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial
applications
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage
protection
Current
limit
Gate
protection
+ Vbb 3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
5
sensor
Load
Short circuit
detection
GND
1
Signal GND
PROFET
Load GND
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Infineon Technologies AG
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1 Page PROFET® ITS 410 E2
Electrical Characteristics
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 1.6 A
Tj=25 °C:
Tj=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 7, Tj =-40...+150°C
Turn-on time
IN to 90% VOUT:
Turn-off time
IN to 10% VOUT:
RL = 12 Ω, Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C
RON
IL(ISO)
IL(GNDhigh)
ton
toff
dV /dton
-dV/dtoff
-- 190 220 mΩ
390 440
1.6 1.8
-- --
-- A
1 mA
12 -- 125 µs
5 -- 85
-- -- 3 V/µs
-- -- 6 V/µs
Operating Parameters
Operating voltage 5)
Undervoltage shutdown
Tj =-40...+150°C: Vbb(on)
4.7 -- 42 V
Tj =25°C: Vbb(under) 2.9 -- 4.5 V
Tj =-40...+150°C:
2.7 -- 4.7
Undervoltage restart
Tj =-40...+150°C: Vbb(u rst)
Undervoltage restart of charge pump
see diagram page 13
Vbb(ucp)
-- -- 4.9
-- 5.6 6.0
V
V
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
∆Vbb(under)
-- 0.1
-- V
Overvoltage shutdown
Tj =-40...+150°C: Vbb(over)
42 -- 52 V
Overvoltage restart
Tj =-40...+150°C: Vbb(o rst)
40 -- -- V
Overvoltage hysteresis
Overvoltage protection6)
Tj =-40...+150°C: ∆Vbb(over)
Tj =-40...+150°C: Vbb(AZ)
-- 0.1
65 70
-- V
-- V
Ibb=4 mA
Standby current (pin 3)
Tj=-40...+25°C:
VIN=0
Tj= 150°C:
Leakage output current (included in Ibb(off))
VIN=0
Operating current (Pin 1)7), VIN=5 V,
Tj =-40...+150°C
Ibb(off)
IL(off)
IGND
-- 10 15 µA
-- 18 25
-- -- 20 µA
-- 1 2.1 mA
5) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
6) Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7.
Infineon Technologies AG
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2006-Mar-28
3Pages PROFET® ITS 410 E2
Truth Table
Input-
Output
Status
level
level
410 E2
Normal operation
Open load
Short circuit to
GND
Short circuit to Vbb
Overtemperature
Undervoltage
Overvoltage
L
H
L
H
L
H
L
H
L
H
L
H
L
H
LH
HH
12) H
HL
LH
LL
HH
H H (L13))
LL
LL
LH
LH
LH
LH
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 13)
Terms
Input circuit (ESD protection)
Ibb
I IN
IN
2
3
Vbb
IL
I ST
PROFET
OUT
5
V IN
4 ST
V ST
GND
V bb
1
R GND
IGND
VON
V OUT
IN RI
ESD-
ZDI1 ZDI2
GND
II
ZDI1 6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
12) Power Transistor off, high impedance.
13) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
Infineon Technologies AG
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6 Page | |||
ページ | 合計 : 15 ページ | ||
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PDF ダウンロード | [ ITS410E2 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
ITS410E2 | Smart High-Side Power Switch | Infineon |