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ITS410E2 の電気的特性と機能

ITS410E2のメーカーはInfineonです、この部品の機能は「Smart High-Side Power Switch」です。


製品の詳細 ( Datasheet PDF )

部品番号 ITS410E2
部品説明 Smart High-Side Power Switch
メーカ Infineon
ロゴ Infineon ロゴ 




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ITS410E2 Datasheet, ITS410E2 PDF,ピン配置, 機能
PROFET® ITS 410 E2
Smart Highside Power Switch
for Industrial Applications
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Operating temperature
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
Ta
65 V
4.7 ... 42 V
220 m
1.8 A
5A
-30…+85 °C
PG-TO220AB/5
5
Standard
5
1
Straight leads
Application
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial
applications
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOStechnology. Providing embedded protective functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage
protection
Current
limit
Gate
protection
+ Vbb 3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
5
sensor
Load
Short circuit
detection
GND
1
Signal GND
PROFET
Load GND
1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Infineon Technologies AG
1 of 15
2006-Mar-28

1 Page





ITS410E2 pdf, ピン配列
PROFET® ITS 410 E2
Electrical Characteristics
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 1.6 A
Tj=25 °C:
Tj=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 7, Tj =-40...+150°C
Turn-on time
IN to 90% VOUT:
Turn-off time
IN to 10% VOUT:
RL = 12 , Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 , Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 , Tj =-40...+150°C
RON
IL(ISO)
IL(GNDhigh)
ton
toff
dV /dton
-dV/dtoff
-- 190 220 m
390 440
1.6 1.8
-- --
-- A
1 mA
12 -- 125 µs
5 -- 85
-- -- 3 V/µs
-- -- 6 V/µs
Operating Parameters
Operating voltage 5)
Undervoltage shutdown
Tj =-40...+150°C: Vbb(on)
4.7 -- 42 V
Tj =25°C: Vbb(under) 2.9 -- 4.5 V
Tj =-40...+150°C:
2.7 -- 4.7
Undervoltage restart
Tj =-40...+150°C: Vbb(u rst)
Undervoltage restart of charge pump
see diagram page 13
Vbb(ucp)
-- -- 4.9
-- 5.6 6.0
V
V
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Vbb(under)
-- 0.1
-- V
Overvoltage shutdown
Tj =-40...+150°C: Vbb(over)
42 -- 52 V
Overvoltage restart
Tj =-40...+150°C: Vbb(o rst)
40 -- -- V
Overvoltage hysteresis
Overvoltage protection6)
Tj =-40...+150°C: Vbb(over)
Tj =-40...+150°C: Vbb(AZ)
-- 0.1
65 70
-- V
-- V
Ibb=4 mA
Standby current (pin 3)
Tj=-40...+25°C:
VIN=0
Tj= 150°C:
Leakage output current (included in Ibb(off))
VIN=0
Operating current (Pin 1)7), VIN=5 V,
Tj =-40...+150°C
Ibb(off)
IL(off)
IGND
-- 10 15 µA
-- 18 25
-- -- 20 µA
-- 1 2.1 mA
5) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V
6) Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7.
Infineon Technologies AG
3
2006-Mar-28


3Pages


ITS410E2 電子部品, 半導体
PROFET® ITS 410 E2
Truth Table
Input-
Output
Status
level
level
410 E2
Normal operation
Open load
Short circuit to
GND
Short circuit to Vbb
Overtemperature
Undervoltage
Overvoltage
L
H
L
H
L
H
L
H
L
H
L
H
L
H
LH
HH
12) H
HL
LH
LL
HH
H H (L13))
LL
LL
LH
LH
LH
LH
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 13)
Terms
Input circuit (ESD protection)
Ibb
I IN
IN
2
3
Vbb
IL
I ST
PROFET
OUT
5
V IN
4 ST
V ST
GND
V bb
1
R GND
IGND
VON
V OUT
IN RI
ESD-
ZDI1 ZDI2
GND
II
ZDI1 6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
12) Power Transistor off, high impedance.
13) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
Infineon Technologies AG
6
2006-Mar-28

6 Page



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部品番号部品説明メーカ
ITS410E2

Smart High-Side Power Switch

Infineon
Infineon


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