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Número de pieza | 2N7002DW | |
Descripción | Small-Signal-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N7002DW (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOS™ Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Logic level
• Avalanche rated
• Fast switching
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
2N7002DW
Product Summary
VDS
RDS(on),max
ID
VGS=10 V
VGS=4.5 V
60 V
3W
4
0.3 A
PG-SOT363
65
4
1
2
3
Type
Package Tape and Reel Information
2N7002DW PG-SOT363 H6327: 3000 pcs/reel
Marking
X8s
HalogenFree Packing
Yes Non Dry
Parameter 1)
Continuous drain current
Pulsed drain current
Symbol Conditions
I D T A=25 °C
T A=70 °C
I D,pulse T A=25 °C
Value
0.30
0.24
1.2
Unit
A
Avalanche energy, single pulse
E AS I D=0.3 A, R GS=25 W
Reverse diode dv /dt
Gate source voltage
dv /dt
V GS
I D=0.3 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=150 °C
ESD class
JESD22-A114 (HBM)
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) Remark: one of both transistors in operation.
1.3 mJ
6
±20
class 0 (<250V)
0.5
-55 ... 150
55/150/56
kV/µs
V
W
°C
Rev.2.3
page 1
2014-09-19
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
0.6
5V
7V
10 V
0.5
4.5 V
0.4
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
6
2N7002DW
5
4V
2.9 V 3.2 V
3.5 V
4
4V
0.3
0.2
0.1
0
0123
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
3
3.5 V
2
3.2 V
2.9 V
1
45
0
0 0.1 0.2 0.3
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
4.5 V
5V
7V
10 V
0.4 0.5
0.6 0.5
0.45
0.5
0.4
0.35
0.4
0.3
0.3 0.25
0.2
0.2
0.15
0.1
0.1
0.05
0
012345
VGS [V]
0
0.00
0.10
0.20
0.30
0.40
ID [A]
Rev.2.3
page 5
2014-09-19
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 2N7002DW.PDF ] |
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