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K1830のメーカーはToshibaです、この部品の機能は「MOSFET ( Transistor ) - 2SK1830」です。 |
部品番号 | K1830 |
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部品説明 | MOSFET ( Transistor ) - 2SK1830 | ||
メーカ | Toshiba | ||
ロゴ | |||
このページの下部にプレビューとK1830ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1830
High Speed Switching Applications
Analog Switch Applications
• 2.5 V gate drive
• Low threshold voltage: Vth = 0.5 to 1.5 V
• High speed
• Enhancement-mode
• Small package
Marking
Equivalent Circuit
2SK1830
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
VDS
VGSS
ID
PD
Tch
Tstg
Rating
20
10
50
100
150
−55 to 150
Unit
V
V
mA
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2H1B
Weight: 2.4 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Start of commercial production
1991-02
1 2014-03-01
1 Page 2SK1830
3 2014-03-01
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ K1830 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
K1830 | MOSFET ( Transistor ) - 2SK1830 | Toshiba |
K1833 | MOSFET ( Transistor ) - 2SK1833 | Panasonic |
K1834 | Silicon N-Channel Power F-MOS | Panasonic |
K1835 | MOSFET ( Transistor ) - 2SK1835 | Hitachi Semiconductor |