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MDF8N60のメーカーはMagnaChipです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | MDF8N60 |
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部品説明 | N-Channel MOSFET | ||
メーカ | MagnaChip | ||
ロゴ | |||
このページの下部にプレビューとMDF8N60ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
MDF8N60
N-Channel MOSFET 600V, 8A, 1.0Ω
General Description
The MDF8N60 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF8N60 is suitable device for SMPS, high Speed switching
and general purpose applications.
Features
VDS = 600V
VDS = 660V
ID = 8.0A
RDS(ON) ≤ 1.0Ω
Applications
@ Tjmax
@ VGS = 10V
@ VGS = 10V
Power Supply
PFC
High Current, High Speed Switching
G DS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Characteristics
Continuous Drain Current (※)
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy EAR(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
EAR
Dv/dt
EAS
TJ, Tstg
Rating
600
660
±30
8.0
4.9
32
46
0.37
4.6
4.5
320
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Nov2009. Version 2.2
1
Symbol
RθJA
RθJC
Rating
62.5
2.71
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 Page 15
14 Vgs=5.5V
13 =6.0V
=6.5V
12 =7.0V
11 =8.0V
10 =10.0V
=15.0V
9
8
7
6
5
4
3 Notes
2
1. 250㎲ PulseTest
2. TC=25℃
1
5 10 15 20
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
※ Notes :
2.5
1. VGS = 10 V
2. ID = 4.0A
2.0
1.5
1.0
0.5
0.0
-50
0 50 100 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
200
2.0
1.8
1.6
1.4
1.2 VGS=10.0V
VGS=20V
1.0
0.8
0.6
0 5 10 15
ID,DrainCurrent [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
20
1.2
※ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
1.1
1.0
0.9
0.8
-50
0 50 100 150
TJ, Junction Temperature [oC]
200
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. VDS=30V
10
150℃
25℃
-55℃
1
※ Notes :
1. VGS = 0 V
10 2. ID = 250㎂
150℃
25℃
1
0.1
246
VGS [V]
Fig.5 Transfer Characteristics
8
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Nov2009. Version 2.2
3 MagnaChip Semiconductor Ltd.
3Pages Worldwide Sales Support Locations
U.S.A
Sunnyvale Office
787 N. Mary Ave. Sunnyvale
CA 94085 U.S.A
Tel : 1-408-636-5200
Fax : 1-408-213-2450
E-Mail : [email protected]
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Staines Middx, TW18 3BA,U.K.
Tel : +44 (0) 1784-895-000
Fax : +44 (0) 1784-895-115
E-Mail : [email protected]
Japan
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Miyahara Yodogawa-Ku
Osaka, 532-0003 Japan
Tel : 81-6-6394-9160
Fax : 81-6-6394-9150
E-Mail : [email protected]
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Taipei,114 Taiwan R.O.C
Tel : 886-2-2657-7898
Fax : 886-2-2657-8751
E-Mail : [email protected]
China
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Suite 1024, Ocean Centre 5 Canton Road,
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Wuzhong Road, (C) 201103
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E-Mail : [email protected]
Korea
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Seoul, 135-738 Korea
Tel : 82-2-6903-3451
Fax : 82-2-6903-3668 ~9
Email : [email protected]
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Nov2009. Version 2.2
6 MagnaChip Semiconductor Ltd.
6 Page | |||
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部品番号 | 部品説明 | メーカ |
MDF8N60 | N-Channel MOSFET | MagnaChip |
MDF8N60B | N-Channel Trench MOSFET | MagnaChip |