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MDF8N60 の電気的特性と機能

MDF8N60のメーカーはMagnaChipです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 MDF8N60
部品説明 N-Channel MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 




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MDF8N60 Datasheet, MDF8N60 PDF,ピン配置, 機能
MDF8N60
N-Channel MOSFET 600V, 8A, 1.0
General Description
The MDF8N60 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF8N60 is suitable device for SMPS, high Speed switching
and general purpose applications.
Features
VDS = 600V
VDS = 660V
ID = 8.0A
RDS(ON) ≤ 1.0Ω
Applications
@ Tjmax
@ VGS = 10V
@ VGS = 10V
Power Supply
PFC
High Current, High Speed Switching
G DS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Characteristics
Continuous Drain Current ()
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy EAR(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
EAR
Dv/dt
EAS
TJ, Tstg
Rating
600
660
±30
8.0
4.9
32
46
0.37
4.6
4.5
320
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Nov2009. Version 2.2
1
Symbol
RθJA
RθJC
Rating
62.5
2.71
Unit
oC/W
MagnaChip Semiconductor Ltd.

1 Page





MDF8N60 pdf, ピン配列
15
14 Vgs=5.5V
13 =6.0V
=6.5V
12 =7.0V
11 =8.0V
10 =10.0V
=15.0V
9
8
7
6
5
4
3 Notes
2
1. 250PulseTest
2. TC=25
1
5 10 15 20
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
Notes :
2.5
1. VGS = 10 V
2. ID = 4.0A
2.0
1.5
1.0
0.5
0.0
-50
0 50 100 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
200
2.0
1.8
1.6
1.4
1.2 VGS=10.0V
VGS=20V
1.0
0.8
0.6
0 5 10 15
ID,DrainCurrent [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
20
1.2
Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
1.1
1.0
0.9
0.8
-50
0 50 100 150
TJ, Junction Temperature [oC]
200
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. VDS=30V
10
150
25
-55
1
Notes :
1. VGS = 0 V
10 2. ID = 250
150
25
1
0.1
246
VGS [V]
Fig.5 Transfer Characteristics
8
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Nov2009. Version 2.2
3 MagnaChip Semiconductor Ltd.


3Pages


MDF8N60 電子部品, 半導体
Worldwide Sales Support Locations
U.S.A
Sunnyvale Office
787 N. Mary Ave. Sunnyvale
CA 94085 U.S.A
Tel : 1-408-636-5200
Fax : 1-408-213-2450
U.K
Knyvett House The Causeway,
Staines Middx, TW18 3BA,U.K.
Tel : +44 (0) 1784-895-000
Fax : +44 (0) 1784-895-115
Japan
Osaka Office
3F, Shin-Osaka MT-2 Bldg 3-5-36
Miyahara Yodogawa-Ku
Osaka, 532-0003 Japan
Tel : 81-6-6394-9160
Fax : 81-6-6394-9150
Taiwan R.O.C
2F, No.61, Chowize Street, Nei Hu
Taipei,114 Taiwan R.O.C
Tel : 886-2-2657-7898
Fax : 886-2-2657-8751
China
Hong Kong Office
Suite 1024, Ocean Centre 5 Canton Road,
Tsim Sha Tsui Kowloon, Hong Kong
Tel : 852-2828-9700
Fax : 852-2802-8183
Shenzhen Office
Room 1803, 18/F
International Chamber of Commerce Tower
Fuhua Road3 CBD, Futian District, China
Tel : 86-755-8831-5561
Fax : 86-755-8831-5565
Shanghai Office
Room E, 8/F, Liaoshen International Building 1068
Wuzhong Road, (C) 201103
Shanghai, China
Tel : 86-21-6405-1521
Fax : 86-21-6505-1523
Korea
891, Daechi-Dong, Kangnam-Gu
Seoul, 135-738 Korea
Tel : 82-2-6903-3451
Fax : 82-2-6903-3668 ~9
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Nov2009. Version 2.2
6 MagnaChip Semiconductor Ltd.

6 Page



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共有リンク

Link :


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