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PDF NCE75H21TB Data sheet ( Hoja de datos )
| Número de pieza | NCE75H21TB | |
| Descripción | NCE N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power | |
| Logotipo |  |
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http://www.ncepower.com
Pb Free Product
NCE75H21TB
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H21TB uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 75V,ID =210A
RDS(ON) < 4.0mΩ @ VGS=10V
(Typ3.3mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H21TB
NCE75H21TB
TO-247
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Limit
75
±20
210
148
850
330
Quantity
-
Unit
V
V
A
A
A
W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
http://www.ncepower.com
Pb Free Product
NCE75H21TB
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 Power De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE75H21TB.PDF ] | |
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