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IRFB7430PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFB7430PBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB7430PBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 97782A
StrongIRFET
IRFB7430PbF
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
1.0m
cG max. 1.3m
ID (Silicon Limited)
409A
S
ID (Package Limited)
195A
D
G
Gate
DS
G
TO-220AB
IRFB7430PbF
D
Drain
S
Source
Ordering Information
Base Part Number
IRFB7430PbF
Package Type
TO-220
Standard Pack
Form
Tube
Qua nti ty
50
Complete Part Number
IRFB7430PbF
6.0
ID = 100A
4.0
TJ = 125°C
2.0
TJ = 25°C
0.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
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500
Limited By Package
400
300
200
100
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
1
05/22/12
1 Page IRFB7430PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
iÃEffective Output Capacitance (Energy Related)
hEffective Output Capacitance (Time Related)
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
300
77
98
202
32
105
160
100
14240
2130
1460
2605
2920
–––
460
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S VDS = 10V, ID = 100A
nC ID = 100A
gVDS =20V
VGS = 10V
ID = 100A, VDS =0V, VGS = 10V
ns VDD = 20V
ID = 30A
gRG = 2.7
VGS = 10V
pF VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
iVGS = 0V, VDS = 0V to 32V
hVGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD
dv/dt
Diode Forward Voltage
fPeak Diode Recovery
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 394
A MOSFET symbol
D
showing the
––– ––– 1576 A integral reverse
G
––– 0.86 1.2
p-n junction diode.
S
gV TJ = 25°C, IS = 100A, VGS = 0V
––– 2.7 ––– V/ns TJ = 175°C, IS = 100A, VDS = 40V
––– 52 ––– ns TJ = 25°C
VR = 34V,
––– 52 –––
TJ = 125°C
––– 97 ––– nC TJ = 25°C
gIF = 100A
di/dt = 100A/μs
––– 97 –––
TJ = 125°C
––– 2.3 –––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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3
3Pages IRFB7430PbF
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
800
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
700
600
BOTTOM 1.0% Duty Cycle
ID = 100A
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
500 4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
400 during avalanche).
6. Iav = Allowable avalanche current.
300 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
200 tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
100 ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFB7430PBF | Power MOSFET ( Transistor ) | International Rectifier |