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IRFB7440PbF の電気的特性と機能

IRFB7440PbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB7440PbF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB7440PbF Datasheet, IRFB7440PbF PDF,ピン配置, 機能
StrongIRFET™
IRFB7440PbF
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant, Halogen-Free*
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
2.0mΩ
max. 2.5mΩ
G ID
c172A
S
ID (Package Limited)
120A
D
G
Gate
DS
G
TO-220AB
IRFB7440PbF
D
D ra in
S
Source
Base Part Number
IRFB7440PbF
Package Type
TO-220
Standard Pack
Form
Qua nti ty
Tube
50
Complete Part Number
IRFB7440PbF
7.0
ID = 100A
6.0
5.0
4.0 TJ = 125°C
3.0
2.0
TJ = 25°C
1.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
200
Limited By Package
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
February 19, 2015

1 Page





IRFB7440PbF pdf, ピン配列
IRFB7440PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs Forward Transconductance
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD
dv/dt
Diode Forward Voltage
fPeak Diode Recovery
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
Min. Typ. Max.
88 ––– –––
––– 90 135
––– 23 –––
––– 32 –––
––– 58 –––
––– 24 –––
––– 68 –––
––– 115 –––
––– 68 –––
––– 4730 –––
––– 680 –––
––– 460 –––
––– 845 –––
––– 980 –––
Units
S
nC
Conditions
VDS = 10V, ID = 100A
ID = 100A
VDS =20V
gVGS = 10V
ns VDD = 20V
ID = 30A
RG = 2.7Ω
gVGS = 10V
pF VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
iVGS = 0V, VDS = 0V to 32V
hVGS = 0V, VDS = 0V to 32V
Min. Typ. Max. Units
Conditions
––– ––– 172
A MOSFET symbol
D
showing the
––– ––– 772
A integral reverse
G
––– 0.9 1.3
p-n junction diode.
S
gV TJ = 25°C, IS = 100A, VGS = 0V
––– 6.8 ––– V/ns TJ = 175°C, IS = 100A, VDS = 40V
––– 24 –––
ns TJ = 25°C VR = 34V,
––– 28 –––
––– 17 –––
gTJ = 125°C IF = 100A
nC TJ = 25°C di/dt = 100A/μs
––– 20 –––
TJ = 125°C
––– 1.3 –––
A TJ = 25°C
3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
February 19, 2015


3Pages


IRFB7440PbF 電子部品, 半導体
IRFB7440PbF
10
1
D = 0.50
0.20
0.1 0.10
0.05
0.01
0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
100 Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
200
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
150
BOTTOM 1.0% Duty Cycle
ID = 100A
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
100 during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
50 tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
February 19, 2015

6 Page



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部品番号部品説明メーカ
IRFB7440PbF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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