DataSheet.jp

2MBI1400VXB-120P-50 の電気的特性と機能

2MBI1400VXB-120P-50のメーカーはFuji Electricです、この部品の機能は「IGBT Module」です。


製品の詳細 ( Datasheet PDF )

部品番号 2MBI1400VXB-120P-50
部品説明 IGBT Module
メーカ Fuji Electric
ロゴ Fuji Electric ロゴ 




このページの下部にプレビューと2MBI1400VXB-120P-50ダウンロード(pdfファイル)リンクがあります。

Total 7 pages

No Preview Available !

2MBI1400VXB-120P-50 Datasheet, 2MBI1400VXB-120P-50 PDF,ピン配置, 機能
http://www.fujielectric.com/products/semiconductor/
2MBI1400VXB-120P-50
IGBT Modules
IGBT MODULE (V series)
1200V / 1400A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Mounting
Screw torque (*3) Main Terminals
-
Sense Terminals
Conditions
Continuous
1ms
1ms
1 device
Tc=25°C
Tc=100°C
AC : 1min.
M5
M8
M4
Maximum ratings
1200
±20
1800
1400
2800
1400
2800
7650
175
150
150
-40 ~ +150
4000
6.0
10.0
2.1
Units
V
V
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : Mounting
3.0 ~   6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals  1.8 ~ 2.1 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Resistance
B value
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
(*4)
VCE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
(*4)
VF
(chip)
trr
R
B
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 1400mA
Tj=25°C
Tj=125°C
VGE = 15V
Tj=150°C
IC = 1400A
Tj=25°C
Tj=125°C
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V
IC = 1400A
VGE = ±15V
RG = 1.6Ω
VGE = 0V
IF = 1400A
IF = 1400A
T=25°C
T=100°C
T=25/50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min. typ. max.
- - 12.0
- - 2400
6.0 6.5 7.0
- 1.75 2.20
- 2.10 -
- 2.15 -
- 1.65 2.10
- 2.00 -
- 2.05 -
- 128 -
- 1.00 -
- 0.40 -
- 0.15 -
- 1.20 -
- 0.15 -
- 1.90 2.35
- 2.05 -
- 2.00 -
- 1.80 2.25
- 1.95 -
- 1.90 -
- 0.20 -
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
nF
µs
V
µs
K
Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal.
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*5)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Inverter FWD
with Thermal Compound
Characteristics
min. typ. max.
- - 0.0195
- - 0.0360
- 0.00420 -
Units
°C/W
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1

1 Page





2MBI1400VXB-120P-50 pdf, ピン配列
2MBI1400VXB-120P-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω, Tj=25°C
10000
1000
100
toff
ton
tr
tf
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω, Tj=125°C, 150°C
10000
toff
Tj=125oC
Tj=150oC
1000
ton
tr
100 tf
10
0
1000
2000
Collector current: Ic [A]
3000
[INVERTER]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=1400A, VGE=±15V, Tj=125°C, 150°C
10000
1000
100
10
0.1
toff
ton
tr
tf
Tj=125oC
Tj=150oC
1
Gate resistance: RG [Ω]
10
[INVERTER]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=1400A, VGE=±15V, Tj=125°C, 150°C
800
Tj=125oC
Tj=150oC
600
400
200
0
0
Eoff
Eon
Err
1
Gate resistance: RG [Ω]
10
3
10
0
1000
2000
Collector current: Ic [A]
3000
[INVERTER]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω, Tj=125°C, 150°C
1000
750
Tj=125oC
Tj=150oC
500
250
0
0
Eoff
Eon
1000
2000
Err
3000
Collector current: Ic [A]
[INVERTER]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE=15V, RG=1.6Ω, Tj=150°C
3000
2500
2000
1500
1000
500
Notice)
Please refer to page 6.
There is definision of VCE.
0
0 200 400 600 800 1000 1200 1400
Collector-Emitter voltage: VCE [V]


3Pages


2MBI1400VXB-120P-50 電子部品, 半導体
2MBI1400VXB-120P-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Definition of on-state voltage at terminal and switching characteristics
Main C1
Main C2E1
Sense C1
VCE (terminal)
G1 of Upper arm
Sense C2E1
Fuji defined VCE value of terminal by using
Sense C1 and Sense C2E1 for Upper arm and
Sense C2E1 and Sense E2 for Lower arm .
Switching characteristics of VCE also is defined
between Sense C1 and Sense C2E1 for Upper arm and
Sense C2E1 and Sense E2 for Lower arm .
Please use these terminals whenever
G2
VCE (terminal)
of Lower arm
measure spike voltage and on-state voltage .
Main E2
Sense E2
6

6 Page



ページ 合計 : 7 ページ
 
PDF
ダウンロード
[ 2MBI1400VXB-120P-50 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
2MBI1400VXB-120P-50

Power Devices (IGBT)

ETC
ETC
2MBI1400VXB-120P-50

IGBT Module

Fuji Electric
Fuji Electric
2MBI1400VXB-120P-54

Power Devices (IGBT)

ETC
ETC


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap