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1MBI200HH-120L-50のメーカーはFuji Electricです、この部品の機能は「IGBT Module」です。 |
部品番号 | 1MBI200HH-120L-50 |
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部品説明 | IGBT Module | ||
メーカ | Fuji Electric | ||
ロゴ | |||
このページの下部にプレビューと1MBI200HH-120L-50ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
http://www.fujielectric.com/products/semiconductor/
1MBI200HH-120L-50
IGBT MODULE
1200V / 200A / 1 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter DB for Motor Drive
AC and DC Servo Drive Amplifier (DB)
Active PFC
Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
IC
Collector current
Icp
-IC
-IC pluse
Collector Power Dissipation
PC
Reverse voltage for FWD
VR
Forword current for FWD
IF
IF pulse
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Screw Torque
Mounting (*3)
Terminals (*4)
-
Conditions
Continuous
1ms
TC=25°C
TC=80°C
TC=25°C
TC=80°C
1ms
1 device
Continuous
1ms
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
Note *3: Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
Note *4: Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
Maximum ratings
1200
±20
300
200
600
400
75
150
1390
1200
200
400
+150
-40 to +125
2500
3.5
4.5
Units
V
V
A
W
V
A
°C
VAC
Nm
1
1 Page 1MBI200HH-120L-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C / chip
500
400
15V 12V
VGE=20V
10V
300
200
8V
100
0
012345678
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
500
400 Tj=25°C Tj=125°C
300
200
100
0
01234567
Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25°C
100.0
10.0
Cies
Coes
1.0
Cres
0.1
0
10 20
Collector-Emitter voltage : VCE [ V ]
30
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C / chip
500
15V 12V
400
VGE=20V
10V
300
200
8V
100
0
012345678
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4 IC=400A
IC=200A
2 IC=100A
0
5 10 15 20 25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
VCC=600V, IC=200A, Tj=25oC
VCE
VGE
0 200 400
Gate charge : Qg [ nC ]
600
3Pages 1MBI200HH-120L-50
Outline Drawings, mm
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Equivalent Circuit Schematic
T1 (G 1)
NTC
T2(E1)
G2
E2
C1
FWD
C2E1
Inverse Diode
E2
6
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ 1MBI200HH-120L-50 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
1MBI200HH-120L-50 | Power Devices (IGBT) | ETC |
1MBI200HH-120L-50 | IGBT Module | Fuji Electric |