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72T03GHのメーカーはAdvanced Power Electronicsです、この部品の機能は「AP72T03GH」です。 |
部品番号 | 72T03GH |
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部品説明 | AP72T03GH | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューと72T03GHダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Advanced Power
Electronics Corp.
AP72T03GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP72T03GJ)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
30V
9mΩ
62A
GD
S
TO-252(H)
G
D
S
TO-251(J)
Rating
30
+ 20
62
44
190
60
0.4
29
24
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
.
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
2.5
62.5
110
Units
℃/W
℃/W
℃/W
1
200902263
1 Page 180
T C =25 o C
10V
7.0V
120
6.0V
5.0V
60
V G = 4.0 V
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
14
I D =15A
T C =25 ℃
12
10
8
6
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
30
20
T j =175 o C
10
T j =25 o C
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
160
T C =175 o C
120
80
40
AP72T03GH/J
10V
7.0V
6.0V
5.0V
V G = 4.0 V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D =30A
V G =10V
1.4
1
0.6
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
200
1.2
0.6
0.0
-50
0 50 100 150
T j , Junction Temperature ( o C )
200
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ 72T03GH データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
72T03GH | AP72T03GH | Advanced Power Electronics |