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STI13NM60NのメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL Power MOSFET」です。 |
部品番号 | STI13NM60N |
| |
部品説明 | N-CHANNEL Power MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTI13NM60Nダウンロード(pdfファイル)リンクがあります。 Total 21 pages
STF13NM60N, STI13NM60N, STP13NM60N,
STU13NM60N, STW13NM60N
N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET
in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages
Datasheet — production data
Features
Order codes
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
STW13NM60N
VDSS
(@Tjmax)
650 V
RDS(on)
max
< 0.36 Ω
ID
11 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
TAB
3
2
1
TO-220FP
123
I²PAK
TAB TAB
3
2
1
TO-220
3
2
1
IPAK
3
2
1
TO-247
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Figure 1. Internal schematic diagram
$ OR 4!"
'
3
3#
Table 1. Device summary
Order codes
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
STW13NM60N
Marking
13NM60N
Packages
TO-220FP
I²PAK
TO-220
IPAK
TO-247
Packaging
Tube
Tube
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November 2012
This is information on a product in full production.
Doc ID 15420 Rev 5
1/21
www.st.com
21
1 Page STF/I/P/U/W13NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220FP I²PAK, TO-220, IPAK, TO-247
VDS Drain-source voltage
VGS Gate-source voltage
Drain current (continuous) at
ID TC = 25 °C
ID
IDM (2)
Drain current (continuous) at
TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
dv/dt (3) Peak diode recovery voltage slope
11(1)
6.93(1)
44(1)
25
600
± 25
11
6.93
44
90
15
VISO
Tstg
Tj
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t=1 s;TC=25 °C)
Storage temperature
Max. operating junction temperature
2500
- 55 to 150
150
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
V
V
A
A
A
W
V/ns
V
°C
°C
Table 3. Thermal data
Value
Symbol
Parameter
I²PAK
TO-220FP
TO-220
Unit
IPAK TO-247
Rthj-case Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient
max
5
62.5
1.39
62.5 100
°C/W
50 °C/W
Table 4. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting TJ=25 °C, ID=IAS, VDD=50 V)
Value
3.5
200
Unit
A
mJ
Doc ID 15420 Rev 5
3/21
3Pages Electrical characteristics
STF/I/P/U/W13NM60N
2.1 Electrical characteristics (curves)
Figure 2.
ID
(A)
Safe operating area for I²PAK and Figure 3.
TO-220
AM03258v1
Thermal impedance for I²PAK and
TO-220
10
10µs
100µs
1
0.1
0.1
Tj=150°C
Tc=25°C
Sinlge
pulse
1ms
10ms
1 10 100 VDS(V)
Figure 4.
ID
(A)
Safe operating area for TO-220FP Figure 5.
AM03259v1
Thermal impedance for TO-220FP
10
10µs
1 100µs
1ms
Tj=150°C
10ms
0.1 Tc=25°C
Single pulse
0.01
0.1
1
10 100 VDS(V)
Figure 6.
ID
(A)
Safe operating area for TO-247
Figure 7.
AM03983v1
Thermal impedance for TO-247
10
1
0.1
0.1
1
10µs
100µs
Tj=150°C
Tc=25°C
Sinlge
pulse
10 100
1ms
10ms
VDS(V)
6/21 Doc ID 15420 Rev 5
6 Page | |||
ページ | 合計 : 21 ページ | ||
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部品番号 | 部品説明 | メーカ |
STI13NM60N | N-CHANNEL Power MOSFET | STMicroelectronics |