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PDF AS4C16M16D1-5BCN Data sheet ( Hoja de datos )
| Número de pieza | AS4C16M16D1-5BCN | |
| Descripción | 16M x 16 bit DDR Synchronous DRAM | |
| Fabricantes | Alliance Semiconductor | |
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AS4C16M16D1
16M x 16 bit DDR Synchronous DRAM (SDRAM)
Alliance Memory Confidential
Advanced (Rev. 1.1, Sep. /2011)
Features
Fast clock rate: 200MHz
Differential Clock CK & CK
Bi-directional DQS
DLL enable/disable by EMRS
Fully synchronous operation
Internal pipeline architecture
Four internal banks, 4M x 16-bit for each bank
Programmable Mode and Extended Mode registers
- CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
Individual byte-write mask control
DM Write Latency = 0
Auto Refresh and Self Refresh
8192 refresh cycles / 64ms
Operating temperature range
- Commercial (0 ~ 70°C)
- Industrial (-40 ~ 85°C)
Precharge & active power down
Power supplies: VDD & VDDQ = 2.5V 0.2V
Interface: SSTL_2 I/O Interface
Package: 66 Pin TSOP II, 0.65mm pin pitch
- Pb free and Halogen free
Package: 60-Ball, 8x13x1.2 mm (max) TFBGA
- Pb free and Halogen Free
Overview
The AS4C16M16D1 SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 256 Mbits.
It is internally configured as a quad 4M x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CK). Data outputs occur
at both rising edges of CK and CK .d Read and write
accesses to the SDRAM are burst oriented; accesses start
at a selected location and continue for a programmed
number of locations in a programmed sequence. Accesses
begin with the registration of a BankActivate command
which is then followed by a Read or Write command. The
AS4C16M16D1 provides programmable Read or Write
burst lengths of 2, 4, or 8. An auto precharge function may
be enabled to provide a self-timed row precharge that is
initiated at the end of the burst sequence. The refresh
functions, either Auto or Self Refresh are easy to use. In
addition, AS4C16M16D1 features programmable DLL
option. By having a programmable mode register and
extended mode register, the system can choose the most
suitable modes to maximize its performance. These
devices are well suited for applications requiring high
memory band-width, result in a device particularly well
suited to high performance main memory and graphics
applications.
Table 1.Ordering Information
Part Number
Clock Data Rate Package Temperature Temp Range
AS4C16M16D1-5TCN 200MHz 400Mbps/pin 66pin TSOPII Commercial 0 ~ 70°C
AS4C16M16D1-5TIN 200MHz 400Mbps/pin 66pin TSOPII Industrial -40 ~ 85°C
AS4C16M16D1-5BCN 200MHz 400Mbps/pin 60ball TFBGA Commercial 0 ~ 70°C
AS4C16M16D1-5BIN 200MHz 400Mbps/pin 60ball TFBGA Industrial -40 ~ 85°C
T: indicates TSOP II package
B: indicates TFBGA package
C: indicates Commercial temp.
I: indicates Industrial temp.
N: indicates lead free ROHS
Alliance Memory, Inc.
551 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800 FAX: (650) 620-9211
Alliance Memory, Inc. reserves the right to change products or specification without notice.
1 page  
AS4C16M16D1
VDD
VSS
VDDQ
VSSQ
VREF
NC
Supply Power Supply: 2.5V ± 0.2V .
Supply Ground
Supply DQ Power: 2.5V ± 0.2V. Provide isolated power to DQs for improved noise immunity.
Supply DQ Ground: Provide isolated ground to DQs for improved noise immunity.
Supply Reference Voltage for Inputs: +0.5*VDDQ
- No Connect: These pins should be left unconnected.
Alliance Memory, lnc. Confidential
5
Rev. 1.1
Sep. /2011
5 Page 
AS4C16M16D1
Table 12. Absolute Maximum Rating
Symbol
Item
Rating
Unit
VIN, VOUT
Input, Output Voltage
- 0.5~ VDDQ + 0.5
V
VDD, VDDQ
Power Supply Voltage
- 1~3.6
V
Commercial
TA
Ambient Temperature
Industrial
0~70
-40~85
°C
°C
TSTG
Storage Temperature
- 65~150
°C
TSOLDER
Soldering Temperature
260 °C
PD Power Dissipation
1W
IOS Short Circuit Output Current
50 mA
Note1: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device.
Note2: These voltages are relative to Vss
Table 13. Recommended D.C. Operating Conditions (TA = -40 ~ 85 C)
Parameter
Symbol
Min.
Max. Unit
Power Supply Voltage
VDD 2.3
2.7 V
Power Supply Voltage (for I/O Buffer)
VDDQ
2.3
2.7 V
Input Reference Voltage
VREF
0.49*VDDQ 0.51* VDDQ V
Input High Voltage (DC)
Input Low Voltage (DC)
Termination Voltage
Input Voltage Level, CK and CK inputs
Input Different Voltage, CK and CK inputs
Input leakage current
Output leakage current
Output High Current
Output Low Current
Note: All voltages are referenced to VSS.
VIH (DC)
VIL (DC)
VTT
VIN (DC)
VID (DC)
II
IOZ
IOH
IOL
VREF + 0.15
-0.3
VREF - 0.04
-0.3
-0.36
-2
-5
-16.2
16.2
VDDQ + 0.3 V
VREF – 0.15
VREF + 0.04
VDDQ + 0.3
V
V
V
VDDQ + 0.6 V
2 A
5 A
- mA
- mA
Note
VOH = 1.95V
VOL = 0.35V
Table 14. Capacitance (VDD = 2.5V, f = 1MHz, TA = 25 C)
Symbol
Parameter
Min.
Max. Unit
CIN1 Input Capacitance (CK, CK )
2 3 pF
CIN2 Input Capacitance (All other input-only pins)
2
3 pF
CI/O DQ, DQS, DM Input/Output Capacitance
4
5 pF
Note: These parameters are guaranteed by design, periodically sampled and are not 100% tested
Alliance Memory, lnc. Confidential
11
Rev. 1.1
Sep. /2011
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet AS4C16M16D1-5BCN.PDF ] | |
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