DataSheet.jp

ISL9V5045S3ST の電気的特性と機能

ISL9V5045S3STのメーカーはFairchild Semiconductorです、この部品の機能は「EcoSPARK N-Channel Ignition IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 ISL9V5045S3ST
部品説明 EcoSPARK N-Channel Ignition IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




このページの下部にプレビューとISL9V5045S3STダウンロード(pdfファイル)リンクがあります。

Total 9 pages

No Preview Available !

ISL9V5045S3ST Datasheet, ISL9V5045S3ST PDF,ピン配置, 機能
November 2009
ISL9V5045S3ST
EcoSPARK® N-Channel Ignition IGBT
500mJ, 450V
Features
„ SCIS Energy = 500mJ at TJ = 25oC
„ Logic Level Gate Drive
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Automotive Ignition Coil Driver Circuits
„ Coil - On Plug Applications
General Description
The ISL9V5045S3ST is next generation ignition IGBT
that offer outstanding SCIS capability in the industry
standard D2-Pak (TO-263) plastic package. This device
is intended for use in automotive ignition circuits,
specifically as a coil drivers. Internal diodes provide voltage
clamping without the need for external components.
EcoSPARK® devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
Package
GATE
EMITTER
COLLECTOR
(FLANGE)
JEDEC TO-263AB
D2-Pak
Symbol
GATE
R1
R2
COLLECTOR
EMITTER
ISL9V5045S3ST Rev. A1
1
www.fairchildsemi.com

1 Page





ISL9V5045S3ST pdf, ピン配列
Dynamic Characteristics
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP Gate to Emitter Plateau Voltage
Switching Characteristics
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
IC = 1.0mA,
VCE = VGE,
See Fig. 10
TC = 25°C
TC = 150°C
IC = 10A,
VCE = 12V
-
1.3
0.75
-
td(ON)R
trR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1K
TJ = 25°C, See Fig. 12
VCE = 300V, L = 2mH,
VGE = 5V, RG = 1K
TJ = 25°C, See Fig. 12
TJ = 25°C, L = 650 µH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
-
-
-
Thermal Characteristics
RθJC Thermal Resistance Junction-Case
Typical Characteristics
TO-263
-
32 - nC
- 2.2 V
- 1.8 V
3.0 -
V
0.7
2.1
10.8
2.8
-
4
7
15
15
500
µs
µs
µs
µs
mJ
- 0.5 °C/W
40
RG = 1K, VGE = 5V,Vdd = 14V
35
30 TJ = 25°C
25
20
15
TJ = 150°C
10
5
SCIS Curves valid for Vclamp Voltages of <480V
0
0 25 50 75 100 125 150 175 200
tCLP, TIME IN CLAMP (µS)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
40
RG = 1K, VGE = 5V,Vdd = 14V
35
30
TJ = 25°C
25
20
15
10 TJ = 150°C
5
SCIS Curves valid for Vclamp Voltages of <480V
0
0 1 2 3 4 5 6 7 8 9 10
L, INDUCTANCE (mHy)
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
ISL9V5045S3ST Rev. A1
3
www.fairchildsemi.com


3Pages


ISL9V5045S3ST 電子部品, 半導体
Typical Characteristics (Continued)
475
ICER = 10mA
470
465
460
455
450
445
440
435
430
10
TJ = - 40°C
TJ = 25°C
TJ = 175°C
100 1000
RG, SERIES GATE RESISTANCE ()
Figure 15. Breakdown Voltage vs Series Gate Resistance
5000
100
0.5
0.2
0.1
10-1 0.05
0.02
t1
10-2 0.01
PD
SINGLE PULSE
10-310-6
10-5
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-4
10-3
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
10-2
Test Circuits and Waveforms
L
PULSE
GEN
RG
G
C
DUT
E
VCE
RG = 1KG
5V
R
or LOAD
L
C
DUT
+
VCE
-
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
ISL9V5045S3ST Rev. A1
6
www.fairchildsemi.com

6 Page



ページ 合計 : 9 ページ
 
PDF
ダウンロード
[ ISL9V5045S3ST データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
ISL9V5045S3S

EcoSPARK N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor
ISL9V5045S3ST

EcoSPARK N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor
ISL9V5045S3ST_F085

EcoSPARK N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap