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ISL9V5045S3STのメーカーはFairchild Semiconductorです、この部品の機能は「EcoSPARK N-Channel Ignition IGBT」です。 |
部品番号 | ISL9V5045S3ST |
| |
部品説明 | EcoSPARK N-Channel Ignition IGBT | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとISL9V5045S3STダウンロード(pdfファイル)リンクがあります。 Total 9 pages
November 2009
ISL9V5045S3ST
EcoSPARK® N-Channel Ignition IGBT
500mJ, 450V
Features
SCIS Energy = 500mJ at TJ = 25oC
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive Ignition Coil Driver Circuits
Coil - On Plug Applications
General Description
The ISL9V5045S3ST is next generation ignition IGBT
that offer outstanding SCIS capability in the industry
standard D2-Pak (TO-263) plastic package. This device
is intended for use in automotive ignition circuits,
specifically as a coil drivers. Internal diodes provide voltage
clamping without the need for external components.
EcoSPARK® devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
Package
GATE
EMITTER
COLLECTOR
(FLANGE)
JEDEC TO-263AB
D2-Pak
Symbol
GATE
R1
R2
COLLECTOR
EMITTER
ISL9V5045S3ST Rev. A1
1
www.fairchildsemi.com
1 Page Dynamic Characteristics
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP Gate to Emitter Plateau Voltage
Switching Characteristics
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
IC = 1.0mA,
VCE = VGE,
See Fig. 10
TC = 25°C
TC = 150°C
IC = 10A,
VCE = 12V
-
1.3
0.75
-
td(ON)R
trR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
VCE = 300V, L = 2mH,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
TJ = 25°C, L = 650 µH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
-
-
-
Thermal Characteristics
RθJC Thermal Resistance Junction-Case
Typical Characteristics
TO-263
-
32 - nC
- 2.2 V
- 1.8 V
3.0 -
V
0.7
2.1
10.8
2.8
-
4
7
15
15
500
µs
µs
µs
µs
mJ
- 0.5 °C/W
40
RG = 1KΩ, VGE = 5V,Vdd = 14V
35
30 TJ = 25°C
25
20
15
TJ = 150°C
10
5
SCIS Curves valid for Vclamp Voltages of <480V
0
0 25 50 75 100 125 150 175 200
tCLP, TIME IN CLAMP (µS)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
40
RG = 1KΩ, VGE = 5V,Vdd = 14V
35
30
TJ = 25°C
25
20
15
10 TJ = 150°C
5
SCIS Curves valid for Vclamp Voltages of <480V
0
0 1 2 3 4 5 6 7 8 9 10
L, INDUCTANCE (mHy)
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
ISL9V5045S3ST Rev. A1
3
www.fairchildsemi.com
3Pages Typical Characteristics (Continued)
475
ICER = 10mA
470
465
460
455
450
445
440
435
430
10
TJ = - 40°C
TJ = 25°C
TJ = 175°C
100 1000
RG, SERIES GATE RESISTANCE (Ω)
Figure 15. Breakdown Voltage vs Series Gate Resistance
5000
100
0.5
0.2
0.1
10-1 0.05
0.02
t1
10-2 0.01
PD
SINGLE PULSE
10-310-6
10-5
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-4
10-3
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
10-2
Test Circuits and Waveforms
L
PULSE
GEN
RG
G
C
DUT
E
VCE
RG = 1KΩ G
5V
R
or LOAD
L
C
DUT
+
VCE
-
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
ISL9V5045S3ST Rev. A1
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
ISL9V5045S3S | EcoSPARK N-Channel Ignition IGBT | Fairchild Semiconductor |
ISL9V5045S3ST | EcoSPARK N-Channel Ignition IGBT | Fairchild Semiconductor |
ISL9V5045S3ST_F085 | EcoSPARK N-Channel Ignition IGBT | Fairchild Semiconductor |