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Número de pieza | ISL9V5045S3 | |
Descripción | EcoSPARK N-Channel Ignition IGBT | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! August 2005
ISL9V5045S3S / ISL9V5045S3
EcoSPARKTM N-Channel Ignition IGBT
500mJ, 450V
Features
SCIS Energy = 500mJ at TJ = 25oC
Logic Level Gate Drive
Applications
Automotive Ignition Coil Driver Circuits
Coil - On Plug Applications
General Description
The ISL9V5045S3S and ISL9V5045S3 are next generation
ignition IGBTs that offer outstanding SCIS capability in the
industry standard D²-Pak (TO-263) plastic package. This
device is intended for use in automotive ignition circuits,
specifically as a coil drivers. Internal diodes provide voltage
clamping without the need for external components.
EcoSPARK™ devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
Package
GATE
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
(FLANGE)
JEDEC TO-263AB
D2-Pak
Symbol
EMMITER
COLLECTOR
GATE
GATE
R1
R2
JEDEC TO-262AA
COLLECTOR
EMITTER
ISL9V5045S3S / ISL9V5045S3 Rev. A
1
www.fairchildsemi.com
1 page Typical Characteristics (Continued)
55
50 VGE = 4.0V
45
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
1000
VECS = 24V
100
VCES = 300V
10
VCES = 250V
1
0.1
-50 -25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
3000
2500
FREQUENCY = 1 MHz
2000
CIES
1500
1000
500
CRES
COES
0
0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 13. Capacitance vs Collector to Emitter
Voltage
2.0
VCE = VGE
1.8 ICE = 1mA
1.6
1.4
1.2
1.0
0.8
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage vs Junction
Temperature
20
ICE = 6.5A, VGE = 5V, RG = 1KΩ
18
Resistive tOFF
16
14
Inductive tOFF
12
10
8
6
Resistive tON
4
2
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
175
8
IG(REF) = 1mA, RL = 0.6Ω, TJ = 25°C
7
6
5
VCE = 12V
4
3
2
1 VCE = 6V
0
0 10 20 30 40
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
50
ISL9V5045S3S / ISL9V5045S3 Rev. A
5
www.fairchildsemi.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet ISL9V5045S3.PDF ] |
Número de pieza | Descripción | Fabricantes |
ISL9V5045S3 | EcoSPARK N-Channel Ignition IGBT | Fairchild Semiconductor |
ISL9V5045S3S | EcoSPARK N-Channel Ignition IGBT | Fairchild Semiconductor |
ISL9V5045S3ST | EcoSPARK N-Channel Ignition IGBT | Fairchild Semiconductor |
ISL9V5045S3ST_F085 | EcoSPARK N-Channel Ignition IGBT | Fairchild Semiconductor |
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