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CQ-2235のメーカーはAsahi Kasei Microsystemsです、この部品の機能は「High-Speed Small Current Sensor」です。 |
部品番号 | CQ-2235 |
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部品説明 | High-Speed Small Current Sensor | ||
メーカ | Asahi Kasei Microsystems | ||
ロゴ | |||
このページの下部にプレビューとCQ-2235ダウンロード(pdfファイル)リンクがあります。 Total 16 pages
[CQ-2235]
CQ-2235
High-Speed Small Current Sensor
1. Genaral Description
CQ-2235 is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional
to the AC/DC current. Quantum well ultra-thin film InAs (Indium Arsenide) is used as the Hall sensor,
which enables the high-accuracy and high-speed current sensing. Simple AI-Shell package with the Hall
sensor, magnetic core, and primary conductor realizes the space-saving and high reliability.
2. Feartures
- Bidirectional type
- Electrical isolation between the primary conductor and the sensor signal
- 3.3V single supply operation
- Ratiometric output
- Low variation and low temperature drift of sensitivity and offset voltage
- Low noise output: 1.2mVrms (typ.)
- Fast response time: 1μs (typ.)
- Small-sized package, halogen free
- Standards: IEC/UL 60950-1, UL 508, CSA C22.2 No. 14
IEC 62109 (certification pending)
MS1569-E-01
-1-
2014/04
1 Page 4. Block Diagram and Functions
P
Magnetic
Core
Amplifier
Buffer
Hall
Sensor
Compensation
Bias Unit
EEPROM Unit
[CQ-2235]
VOUT
VSS
VDD
DATA_IO SCLK
N
Figure 1. Functional block diagram of CQ-2235
Circuit Block
Hall Sensor
Amplifier
Buffer
Compensation
Bias Unit
EEPROM Unit
Magnetic Core
Table 1. Explanation of circuit block
Function
Hall element which detects magnetic flux density generated from the measured current.
Amplifier of Hall element‟s output.
Output buffer with gain. This block outputs the voltage (VOUT) proportional to the current
applied to the primary conductor.
Compensation circuit which adjusts the temperature drifts of sensitivity and offset
voltage.
Drive circuit for the Hall element.
Non-volatile memory for setting adjustment parameters. The parameters are set before the
shipment.
Magnetic core which gathers the magnetic flux density to the Hall element.
MS1569-E-01
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2014/04
3Pages [CQ-2235]
10. Electrical Characteristics
Table 5. Electrical characteristics
Conditions (unless otherwise specified): Ta = 25°C, VDD = 3.3V
Parameter
Symbol
Conditions
Min.
Maximum Primary
Current (RMS)
IRMSmax
−50
Current Consumption
Sensitivity (Note 1)
Offset Voltage (Note 1)
Linear Sensing Range
Linearity Error (Note 1)
IDD No loads
Vh See Figure 5
Vof IIN = 0A
INS
ρ See Figure 5, Figure 6
15.3
1.636
−85
−1
Rise Response Time
tr
CL = 100pF
See Figure 9
Fall Response Time
Bandwidth
Output Noise (Note 2)
Temperature Drift of
Sensitivity
Temperature Drift of
Offset Voltage
tf
fT
VNrms
Vh-dmax
Vof-dmax
CL = 100pF
See Figure 9
−3dB, CL = 100pF
100Hz to 4MHz
Ta = −40 to 110C
See Figure 7
Ta = −40 to 110C, IIN = 0A
See Figure 8
Ratiometric Error of
Sensitivity (Note 2)
Vh-R VDD = 2.97V to 3.63V
−1
Ratiometric Error of
Offset Voltage (Note 2)
Total Accuracy (Note 3)
Primary Conductor
Resistance
Vof-R
ETO
R1
VDD = 2.97V to 3.63V
IIN = 0A
Ta = −40 to 110C
−54A ≤ IIN ≤ 54A
−0.6
Isolation Voltage
(Note 2)
VINS AC 50/60Hz, 60sec
3
Isolation Resistance
(Note 2)
RINS DC 1kV
500
Clearance Distance
(Note 2)
dCL
between the primary and the
secondary
13.3
Creepage Distance
(Note 2)
dCP
between the primary and the
secondary
13.3
Typ.
6.2
15.5
1.650
1
1
300
1.2
±0.4
±2.5
1.3
100
Max.
50
9.6
15.7
1.664
85
1
1
0.6
Units
A
mA
mV/A
V
A
%F.S.
μs
μs
kHz
mVrms
%
mV
%
%F.S.
%F.S.
μΩ
kV
MΩ
mm
mm
Note 1.
Note 2.
Note 3.
These parameters can drift by the values in 14. Reliability Tests after the reflow and over the
lifetime of this product.
These parameters are guaranteed by design.
Total accuracy ETO is calculated by the equation below.
ETO = |100 × (Vh_meas − Vh) / Vh| + |100 × (Vof_meas − Vof_meas_35) / (Vh × |INS| × 2)| + |ρmeas|
where Vh_meas[mV/A], Vof_meas[V], ρmeas[%F.S.] represent the measured value of sensitivity, offset
voltage and linearity error respectively, Vh[mV/A] represent the typical value of sensitivity, and
Vof_meas_35[V] represent the measured value of offset voltage at Ta = 35C. In the case of CQ-2235,
ETO is calculated by the equation as below.
ETO = |100 × (Vh_meas − 15.5) / 15.5| + |100 × (Vof_meas − Vof_meas_35) / (15.5 × 85 × 2)| + |ρmeas|
MS1569-E-01
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2014/04
6 Page | |||
ページ | 合計 : 16 ページ | ||
|
PDF ダウンロード | [ CQ-2235 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
CQ-2232 | High-Speed Small Current Sensor | Asahi Kasei Microsystems |
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CQ-2234 | High-Speed Small Current Sensor | Asahi Kasei Microsystems |
CQ-2235 | High-Speed Small Current Sensor | Asahi Kasei Microsystems |