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FT1000A-16 の電気的特性と機能

FT1000A-16のメーカーはPowerex Power Semiconductorsです、この部品の機能は「Phase Control SCR 1000 Amperes Avg 800-2500 Volts」です。


製品の詳細 ( Datasheet PDF )

部品番号 FT1000A-16
部品説明 Phase Control SCR 1000 Amperes Avg 800-2500 Volts
メーカ Powerex Power Semiconductors
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FT1000A-16 Datasheet, FT1000A-16 PDF,ピン配置, 機能
Ordering number : ENN*6302
Preliminary
CMOS IC
LC35256FM, FT-55U/70U
256K (32768 words × 8 bits) SRAM
Control Pins: OE and CE
Overview
The LC35256FM and LC35256FT are asynchronous
silicon-gate CMOS SRAMs with a 32K-word by 8-bit
structure. These are full-CMOS devices with 6 transistors
per memory cell, and feature low-voltage operation, a low
operating current drain, and an ultralow standby current.
Control inputs include OE for fast memory access and CE
(chip enable) for power saving and device selection. This
makes these devices optimal for systems that require low
power or battery backup, and makes memory expansion
easy. The ultralow standby current allows these devices to
be used with capacitor backup as well.
Features
• Supply voltage range: 4.5 to 5.5 V
• Access time at 5 V operation:
LC35256FM, FT-55U: 55 ns (maximum)
LC35256FM, FT-70U: 70 ns (maximum)
• Standby current: 3.0 µA (Ta 70°C)
5.0 µA (Ta 85°C)
• Operating temperature: –40 to +85°C
• Data retention voltage: 2.0 to 5.5 V
• All I/O levels: TTL compatible
• Input/output shared function pins, 3-state output pins
• No clock required
• Package
28-pin SOP (450 mil) plastic package: LC35256FM
28-pin TSOP (8 × 13.4 mm) plastic package: LC35256FT
Package Dimensions
unit: mm
3187A-SOP28D
[LC35256FM]
28 15
1 14
18.0
0.4 1.27
unit: mm
3221-TSOP28 (Type I)
[LC35256FT]
21 8
0.15
SANYO: SOP28D
22 28 1
7
0.55 0.2
8.1
0.125
SANYO: TSOP28 (Type I)
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52600RM (OT) No. 6302-1/7

1 Page





FT1000A-16 pdf, ピン配列
LC35256FM, FT-55U/70U
Pin Functions
A0 to A14
WE
OE
CE
I/O1 to I/O8
VCC, GND
Address input
Read/write control input
Output enable input
Chip enable input
Data I/O
Power supply, ground
Function Table
Mode
Read cycle
Write cycle
Output disable
Unselected
CE OE WE
LLH
LX L
LHH
HX X
I/O
Data output
Data input
High impedance
High impedance
Specifications
Absolute Maximum Ratings
Parameter
Maximum supply voltage
Input pin voltage
I/O pin voltage
Operating temperature
Storage temperature
Symbol
VCC max
VIN
VI/O
Topr
Tstg
Note: * The minimum value is –3.0 V for pulse widths under 30 ns.
I/O Capacitances at Ta = 25°C, f = 1 MHz
Supply current
ICCA
ICCA
ICCA
ICCS
Conditions
Parameter
Symbol
Conditions
I/O pin capacitance
Input pin capacitance
CI/O
CI
Note: All units are not tested; only samples are tested.
VI/O = 0 V
VIN = 0 V
DC Allowable Operating Ranges at Ta = –40 to +85°C, VCC = 4.5 to 5.5 V
Parameter
Symbol
Supply voltage
Input voltage
VCC
VIH
VIL
Note: * The minimum value is –3.0 V for pulse widths under 30 ns.
Conditions
Ratings
7.0
–0.3* to VCC + 0.3
–0.3 to VCC + 0.3
–40 to +85
–55 to +125
Unit
V
V
V
°C
°C
Ratings
Unit
min typ max
6 10 pF
6 10 pF
min
4.5
2.2
–0.3*
Ratings
typ
5.0
max
5.5
VCC + 0.3
+0.8
Unit
V
V
V
No. 6302-3/7


3Pages


FT1000A-16 電子部品, 半導体
LC35256FM, FT-55U/70U
Notes:1. WE must be held at the high level during the read cycle.
2. Do not apply reverse phase signals to the DOUT pins when those pins are in the output state.
3. The time tWP is the period when both CE and WE are low. It is defined as the time from the fall of WE to the rise of CE or WE, whichever occurs
first.
4. The time tCW is the period when both CE and WE are low. It is defined as the time from the fall of CE to the rise of CE or WE, whichever occurs first.
5. The DOUT pins will be in the high-impedance state if any one of the following hold: OE is at the high level, CE is at the high level, or WE is at the low
level.
6. The OE pin must be either held high or held low during the write cycle.
7. DOUT has the same phase as the write data during this write cycle.
Circuit Design Notes
When designing application circuits, always take the following into consideration and design the circuits so that the
absolute maximum ratings are never exceeded.
• Supply voltage fluctuations
• Sample-to-sample variations in the electrical characteristics of the electronic components used, including
semiconductor devices, resistors, and capacitors.
• Ambient temperature
• Variations in the input and clock signals
• The application of abnormal pulses
Furthermore, be sure to operate this device within the stipulated ranges of all parameters for which an allowable
operating range is specified.
When CMOS IC input pins are left in the open state, through currents may occur in internal circuits to which
intermediate voltage levels are applied, and this can result in incorrect circuit operation. Be sure to handle all unused
input pins as specified in the device documentation.
Data Retention Conditions at Ta = –40 to +85°C
Parameter
Data retention supply voltage
Symbol
VDR
VCE VCC – 0.2 V
Data retention supply current
ICCDR
VCC = 3.0 V
VCE VCC – 0.2 V
Chip enable setup time
Chip enable hold time
tCDR
tR
Note: * Reference values for VCC = 3 V, Ta = 25°C.
** tRC: Read cycle time
Conditions
Ta 25°C
Ta 60°C
Ta 70°C
Ta 85°C
min
2.0
0
tRC**
typ*
0.02
max
5.5
Unit
V
1.0
µA
2.0
3.5
ns
ns
Data Retention Waveforms
VCC
VCCL*
tCDR
VIH
VDR
VCE
GND
Note: * VCCL 5 V operation: 4.5 V
Data retention mode
VCE VCC – 0.2 V
tR
No. 6302-6/7

6 Page



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部品番号部品説明メーカ
FT1000A-16

Phase Control SCR 1000 Amperes Avg 800-2500 Volts

Powerex Power Semiconductors
Powerex Power Semiconductors


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