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CQ-209B の電気的特性と機能

CQ-209BのメーカーはAsahi Kasei Microsystemsです、この部品の機能は「High-Speed Small Current Sensor」です。


製品の詳細 ( Datasheet PDF )

部品番号 CQ-209B
部品説明 High-Speed Small Current Sensor
メーカ Asahi Kasei Microsystems
ロゴ Asahi Kasei Microsystems ロゴ 




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CQ-209B Datasheet, CQ-209B PDF,ピン配置, 機能
[CQ-209B]
CQ-209B
High-Speed Small Current Sensor
Features
CQ-209B is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional
to the AC/DC current. Quantum well ultra-thin film InAs (Indium Arsenide) is used as the Hall sensor, which
enables the high-accuracy and high-speed current sensing. Simple AI-Shell package with the Hall sensor,
magnetic core, and primary conductor realizes the space-saving and high reliability.
Features
- Unidirectional type
- Electrical isolation between the primary conductor and the sensor signal
- 5V single supply operation
- Ratiometric output
- Low variation and low temperature drift of sensitivity and offset voltage
- Low noise output: 2.1mVrms (max.)
- Fast response time: 1μs (typ.)
- Small-sized surface mount package, halogen free
Functional Block Diagram
N
Magnetic
Core
Amplifier
Buffer
VOUT
Hall
Sensor
Compensation
VSS
Bias Unit
EEPROM Unit
VDD
P DATA_IO SCLK
Figure 1. Functional block diagram of CQ-209B
MS1290-E-06
-1-
2013/09

1 Page





CQ-209B pdf, ピン配列
[CQ-209B]
Absolute Maximum Ratings
Table 3. Absolute maximum ratings
Parameter
Symbol
Min.
Max.
Units
Notes
Supply Voltage
VDD 0.3
6 V VDD
Analog Output Current
IOUT
1
1 mA VOUT
Storage Temperature
Tstg
40
125 C
WARNING: Operation at or beyond these limits may result in permanent damage to the device. Normal
operation is not guaranteed at these extremes.
Primary Current Derating Curve
Conditions: Mounted on the test board complying with the EIA/JEDEC Standards (EIA/JESD51.)
25
20
15
10
5
0
-60 -40 -20
0
20 40 60 80
Ta [oC]
Figure 4. Primary current derating curve of CQ-209B
100
Recommended Operating Conditions
Table 4. Recommended operating conditions
Parameter
Symbol Min.
Typ.
Max.
Units
Notes
Supply Voltage
Output Current
Output Load
Capacitance
VDD 4.5 5.0
IOUT 0.5
CL
5.5 V
0.5 mA VOUT
100 pF VOUT
Operating Ambient
Temperature
Ta
40
90 C
NOTE: Electrical characteristics are not guaranteed when operated at or beyond these conditions.
MS1290-E-06
-3-
2013/09


3Pages


CQ-209B 電子部品, 半導体
[CQ-209B]
(5) Temperature drift of offset voltage Vof-d [mV]
Temperature drift of offset voltage is defined as the drift value between the offset voltage (Vof) at Ta=Ta1
(40C<Ta1<90C) and the Vof at Ta=35C, and calculated from the formula below:
Vof-d = Vof(Ta = Ta1) Vof(Ta = 35C)
Maximum temperature drift of offset voltage (Vof-dmax) is defined as the maximum value of |Vof-d| through the
defined temperature range.
Reference data of the temperature drift of offset voltage of CQ-209B is shown in Figure 7.
5
4
3
VDD=5.0V
IIN=-35~0A
2
1
0
-1
-2
-3
-4
-5
-60 -40 -20 0 20 40 60 80 100 120
Ta [°C]
Figure 6. Temperature drift of sensitivity
of CQ-209B
(for reference, n=1)
40
30
VDD=5.0V
IIN=0A
20
10
0
-10
-20
-30
-40
-60 -40 -20 0 20 40 60 80 100 120
Ta [°C]
Figure 7. Temperature drift of offset voltage
of CQ-209B
(for reference, n=3)
(6) Rise response time tr [μs] and fall response time tf [μs]
Rise response time (or fall response time) is defined as the time delay from the 90% (or 10%) of input
primary current (IIN) to the 90% (or 10%) of the VOUT voltage (VOUT) under the pulse input of primary
current (see Figure 8.)
IIN IIN
VOUT
90% IIN
Time
VOUT
10% IIN
Time
90% Vout
10% Vout
tr
Time
tf
Time
Rise response time (tr)
Fall response time (tf)
Figure 8. Definition of response time
MS1290-E-06
-6-
2013/09

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
CQ-209B

High-Speed Small Current Sensor

Asahi Kasei Microsystems
Asahi Kasei Microsystems
CQ-209D

High-Speed Small-Sized Current Sensor

Asahi Kasei Microsystems
Asahi Kasei Microsystems


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