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CQ-209BのメーカーはAsahi Kasei Microsystemsです、この部品の機能は「High-Speed Small Current Sensor」です。 |
部品番号 | CQ-209B |
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部品説明 | High-Speed Small Current Sensor | ||
メーカ | Asahi Kasei Microsystems | ||
ロゴ | |||
このページの下部にプレビューとCQ-209Bダウンロード(pdfファイル)リンクがあります。 Total 13 pages
[CQ-209B]
CQ-209B
High-Speed Small Current Sensor
Features
CQ-209B is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional
to the AC/DC current. Quantum well ultra-thin film InAs (Indium Arsenide) is used as the Hall sensor, which
enables the high-accuracy and high-speed current sensing. Simple AI-Shell package with the Hall sensor,
magnetic core, and primary conductor realizes the space-saving and high reliability.
Features
- Unidirectional type
- Electrical isolation between the primary conductor and the sensor signal
- 5V single supply operation
- Ratiometric output
- Low variation and low temperature drift of sensitivity and offset voltage
- Low noise output: 2.1mVrms (max.)
- Fast response time: 1μs (typ.)
- Small-sized surface mount package, halogen free
Functional Block Diagram
N
Magnetic
Core
Amplifier
Buffer
VOUT
Hall
Sensor
Compensation
VSS
Bias Unit
EEPROM Unit
VDD
P DATA_IO SCLK
Figure 1. Functional block diagram of CQ-209B
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Absolute Maximum Ratings
Table 3. Absolute maximum ratings
Parameter
Symbol
Min.
Max.
Units
Notes
Supply Voltage
VDD −0.3
6 V VDD
Analog Output Current
IOUT
−1
1 mA VOUT
Storage Temperature
Tstg
−40
125 C
WARNING: Operation at or beyond these limits may result in permanent damage to the device. Normal
operation is not guaranteed at these extremes.
Primary Current Derating Curve
Conditions: Mounted on the test board complying with the EIA/JEDEC Standards (EIA/JESD51.)
25
20
15
10
5
0
-60 -40 -20
0
20 40 60 80
Ta [oC]
Figure 4. Primary current derating curve of CQ-209B
100
Recommended Operating Conditions
Table 4. Recommended operating conditions
Parameter
Symbol Min.
Typ.
Max.
Units
Notes
Supply Voltage
Output Current
Output Load
Capacitance
VDD 4.5 5.0
IOUT −0.5
CL
5.5 V
0.5 mA VOUT
100 pF VOUT
Operating Ambient
Temperature
Ta
−40
90 C
NOTE: Electrical characteristics are not guaranteed when operated at or beyond these conditions.
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(5) Temperature drift of offset voltage Vof-d [mV]
Temperature drift of offset voltage is defined as the drift value between the offset voltage (Vof) at Ta=Ta1
(−40C<Ta1<90C) and the Vof at Ta=35C, and calculated from the formula below:
Vof-d = Vof(Ta = Ta1) − Vof(Ta = 35C)
Maximum temperature drift of offset voltage (Vof-dmax) is defined as the maximum value of |Vof-d| through the
defined temperature range.
Reference data of the temperature drift of offset voltage of CQ-209B is shown in Figure 7.
5
4
3
VDD=5.0V
IIN=-35~0A
2
1
0
-1
-2
-3
-4
-5
-60 -40 -20 0 20 40 60 80 100 120
Ta [°C]
Figure 6. Temperature drift of sensitivity
of CQ-209B
(for reference, n=1)
40
30
VDD=5.0V
IIN=0A
20
10
0
-10
-20
-30
-40
-60 -40 -20 0 20 40 60 80 100 120
Ta [°C]
Figure 7. Temperature drift of offset voltage
of CQ-209B
(for reference, n=3)
(6) Rise response time tr [μs] and fall response time tf [μs]
Rise response time (or fall response time) is defined as the time delay from the 90% (or 10%) of input
primary current (IIN) to the 90% (or 10%) of the VOUT voltage (VOUT) under the pulse input of primary
current (see Figure 8.)
IIN IIN
VOUT
90% IIN
Time
VOUT
10% IIN
Time
90% Vout
10% Vout
tr
Time
tf
Time
Rise response time (tr)
Fall response time (tf)
Figure 8. Definition of response time
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ページ | 合計 : 13 ページ | ||
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PDF ダウンロード | [ CQ-209B データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
CQ-209B | High-Speed Small Current Sensor | Asahi Kasei Microsystems |
CQ-209D | High-Speed Small-Sized Current Sensor | Asahi Kasei Microsystems |