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PDF FDMS86368_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDMS86368_F085 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDMS86368_F085
N-Channel PowerTrench® MOSFET
80 V, 80 A, 4.5 mΩ
December
2014
Features
Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 80 A
Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
For current package drawing, please refer to the Fairchild web‐
site at https://www.fairchildsemi.com/package‐drawings/PQ/
PQFN08M.pdf
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate Above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
80
±20
80
See Figure 4
82
214
1.43
-55 to + 175
0.7
50
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 40uH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
drain pins. RθJC is
on mounting on a 1
guaranteed by design,
in2 pad of 2oz copper.
while
RθJAis
determined
by
the
board
design.
The maximum rating
Package Marking and Ordering Information
Device Marking
FDMS86368
Device
FDMS86368_F085
Package
Power56
Reel Size
13”
Tape Width
12mm
Quantity
3000units
©2014 Fairchild Semiconductor Corporation
FDMS86368_F085 Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Characteristics
40
ID = 80A
30
TJ = 175oC
20
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
TJ = 25oC
10
0
456789
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. RDSON vs. Gate Voltage
10
2.2
PULSE DURATION = 80μs
2.0 DUTY CYCLE = 0.5% MAX
1.8
1.6
1.4
1.2
1.0
0.8 ID = 80A
0.6 VGS = 10V
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 12. Normalized RDSON vs. Junction
Temperature
1.4
VGS = VDS
1.2 ID = 250μA
1.0
0.8
0.6
0.4
0.2
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
1.10
ID = 5mA
1.05
1.00
0.95
0.90
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10000
1000
100
Ciss
Coss
10
f = 1MHz
Crss
VGS = 0V
1
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs. Drain to Source
Voltage
10
ID = 80A
8
6
VDD =32V
VDD = 40V
VDD = 48V
4
2
0
0 10 20 30 40 50 60
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs. Gate to Source
Voltage
FDMS86368_F085 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDMS86368_F085.PDF ] | |
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