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K4113 の電気的特性と機能

K4113のメーカーはToshibaです、この部品の機能は「Field Effect Transistor Silicon N Channel MOS Type」です。


製品の詳細 ( Datasheet PDF )

部品番号 K4113
部品説明 Field Effect Transistor Silicon N Channel MOS Type
メーカ Toshiba
ロゴ Toshiba ロゴ 




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K4113 Datasheet, K4113 PDF,ピン配置, 機能
2SK4113
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV)
2SK4113
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 2.0 (typ.)
High forward transfer admittance: |Yfs| = 4.5 S (typ.)
Low leakage current: IDSS = 100 A (VDS = 720 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
5
15
45
595
5
4.5
150
-55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: VDD = 90 V, Tch = 25°C(Initial), L = 43.6 mH, IAR = 5.0 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2006-12-27

1 Page





K4113 pdf, ピン配列
5
COMMON
SOURCE
4
Tc = 25°C
PULSE TEST
ID – VDS
8
10
6
5.5
5.25
3
5
2
4.75
1 VGS = 4.5 V
0
0 4 8 12 16 20 24
DRAIN-SOURCE VOLTAGE VDS (V)
2SK4113
6
COMMON
SOURCE
5 Tc = 25°C
PULSE TEST
4
ID – VDS
10 6
8
5.5
5.25
3
5
2
4.75
1 VGS = 4 .5V
0
0 10 20
DRAIN-SOURCE VOLTAGE VDS
30
(V)
ID – VGS
10
COMMON SOURCE
8 VDS = 20 V
PULSE TEST
6
4
Tc = −55°C
2 100
25
0
02
468
GATE-SOURCE VOLTAGE VGS
10
(V)
VDS – VGS
20
COMMON SOURCE
Tc = 25
14 PULSE TEST
12 ID = 5 A
83
4 1.5
0
0 4 8 12
GATE-SOURCE VOLTAGE
16
VGS
20
(V)
Yfs– ID
10
Tc = −55°C
25
100
1
0.1
0.1
COMMON SOURCE
VDS = 20 V
PULSE TEST
1 10
DRAIN CURRENT ID (A)
RDS (ON) – ID
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
5
3 VGS = 10 V 15V
1
0.01
0.1
1
DRAIN CURRENT ID (A)
10
3 2006-12-27


3Pages


K4113 電子部品, 半導体
2SK4113
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice. 021023_D
060116EAA
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc. 021023_A
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk. 021023_B
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others. 021023_C
6 2006-12-27

6 Page



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