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PDF AH921 Data sheet ( Hoja de datos )
| Número de pieza | AH921 | |
| Descripción | HIGH SENSITIVITY CMOS HALL-EFFECT LATCH | |
| Fabricantes | BCD | |
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Data Sheet
HIGH SENSITIVITY CMOS HALL-EFFECT LATCH
AH921
General Description
The AH921 is a Hall-effect latch designed in mixed
signal CMOS technology. It is quite suitable for use
in automotive, industrial and consumer applications.
Superior high-temperature performance is made
possible through dynamic offset cancellation, which
reduces the residual offset voltage normally caused
by device over-molding, temperature dependencies,
and thermal stress. The device integrates a voltage
regulator, Hall-voltage generator, small-signal
amplifier, chopper stabilization, schmitt trigger, and
is directly drivable by the output.
An on-board regulator permits operation with supply
voltage from 3.5V to 24V.
The AH921 is available in TO-92S-3 and SOT-23-3
packages, which are optimized for most applications.
Features
• Wide Operating Voltage Range from 3.5 to 24V
• Symmetrical Switch Points
• Chopper-stabilized Amplifier Stage
• Superior Temperature Stability
• Compact Size
• Built-in Pull-up Resistor
• ESD Rating: 3500V (Human Body Model)
Applications
• Brushless DC Motor Commutation
• Brushless DC Fan
• Solid-state Switch
• Revolution Counting
• Speed Detection
• High Sensitivity and Unconnected Switch
TO-92S-3
SOT-23-3
Figure 1. Package Types of AH921
Jul. 2011 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
1
1 page  
Data Sheet
HIGH SENSITIVITY CMOS HALL-EFFECT LATCH
AH921
Electrical Characteristics
VCC =12V, TA=25°C, unless otherwise specified.
Parameter
Supply Voltage
Supply Current
Saturation Voltage
Output Leakage Current
Output Rising Time
Output Falling Time
Symbol
Conditions
VCC Operating
VCC=12V, B<BRP
ICC
VCC=12V, B>BOP
VSAT IOUT=20mA, B>BOP
ILEAKAGE VCC=VOUT=24V, B<BRP
tRISING CL=20pF
tFALLING CL=20pF
Min Typ Max Unit
3.5 12
24
V
3.0 5.0 mA
3.0 5.0 mA
185 500 mV
0.1 10 μA
0.4 2
μs
0.4 2
μs
Magnetic Characteristics
VCC =12V, TA=25°C, unless otherwise specified.
Parameter
Operating Point
Releasing Point
Hysteresis
Symbol Min Typ Max Unit
BOP 5 22 40 Gauss
BRP
-40 -22
-5 Gauss
BHYS
45 Gauss
Jul. 2011 Rev. 1. 2
Figure 4. Magnetic Flux Density of AH921
BCD Semiconductor Manufacturing Limited
5
5 Page 
HIGH SENSITIVITY CMOS HALL-EFFECT LATCH
Typical Performance Characteristics (Continued)
Data Sheet
AH921
450
400
350
300
250
200
150
100
50
0
0
SOT-23-3
TO-92S-3
25 50 75 100 125 150
T (oC)
A
Figure 17. PD vs. TA
Typical Application
Output
CL
0.1 F
VCC
Figure 18. Typical Application Circuit of AH921
Jul. 2011 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet AH921.PDF ] | |
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