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B30H100G の電気的特性と機能

B30H100GのメーカーはON Semiconductorです、この部品の機能は「Switch-mode Power Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 B30H100G
部品説明 Switch-mode Power Rectifier
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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B30H100G Datasheet, B30H100G PDF,ピン配置, 機能
MBR30H100CT,
MBRF30H100CT
Switch‐mode
Power Rectifier
100 V, 30 A
Features and Benefits
Low Forward Voltage: 0.67 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
These are Pb−Free Devices
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model = 3B
Machine Model = C
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
100 VOLTS
1
2, 4
3
MARKING
DIAGRAMS
4
1
2
3
TO−220
CASE 221A
STYLE 6
AYWW
B30H100G
AKA
ISOLATED TO−220
CASE 221D
STYLE 3
AYWW
B30H100G
AKA
1
2
3
A = Assembly Location
Y = Year
WW = Work Week
B30H100 = Device Code
G = Pb−Free Package
AKA = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 5
1
Publication Order Number:
MBR30H100CT/D

1 Page





B30H100G pdf, ピン配列
MBR30H100CT, MBRF30H100CT
100 100
10 175°C
10 175°C
TJ = 150°C
1.0
125°C
TJ = 150°C
1.0
125°C
0.1
0.0
25°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1.1
Figure 1. Typical Forward Voltage
25°C
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
1E−01
1E−02
1E−03
1E−04
1E−05
1E−06
1E−07
1E−08
0
TJ = 150°C
TJ = 125°C
TJ = 25°C
20 40 60 80
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
1E−01
1E−02
1E−03
1E−04
1E−05
1E−06
1E−07
1E−08
100 0
TJ = 150°C
TJ = 125°C
TJ = 25°C
20 40 60 80
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
100
26
24 dc
22
20
18 SQUARE WAVE
16
14
12
10
8.0
6.0
4.0
2.0
0
130 135 140 145 150 155 160 165 170 175 180
TC, CASE TEMPERATURE (C°)
Figure 5. Current Derating, Case Per Leg
26
24
22
20
18
16
14
12
10
8.0 SQUARE WAVE
6.0
4.0
2.0
0
0 25 50
dc
dc
75
RATED VOLTAGE APPLIED
RqJA = 16° C/W
RqJA = 60° C/W
(NO HEATSINK)
100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Current Derating, Ambient Per Leg
http://onsemi.com
3


3Pages


B30H100G 電子部品, 半導体
MBR30H100CT, MBRF30H100CT
MERCURY
SWITCH
S1
+VDD
IL 10 mH COIL
ID
DUT
VD
IL
t0
BVDUT
ID
VDD
t1 t2 t
Figure 13. Test Circuit
The unclamped inductive switching circuit shown in
Figure 13 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
Figure 14. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):
ǒ ǓWAVAL [
1
2
LI
2
LPK
BVDUT
BVDUTVDD
EQUATION (2):
WAVAL
[
1
2
LI
2
LPK
http://onsemi.com
6

6 Page



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部品番号部品説明メーカ
B30H100G

Switch-mode Power Rectifier

ON Semiconductor
ON Semiconductor


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