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IS46TR85120A の電気的特性と機能

IS46TR85120AのメーカーはISSIです、この部品の機能は「4Gb DDR3 SDRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS46TR85120A
部品説明 4Gb DDR3 SDRAM
メーカ ISSI
ロゴ ISSI ロゴ 




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IS46TR85120A Datasheet, IS46TR85120A PDF,ピン配置, 機能
IS43/46TR16256A, IS43/46TR16256AL,
IS43/46TR85120A, IS43/46TR85120AL
512Mx8, 256Mx16 4Gb DDR3 SDRAM
FEATURES
Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
High speed data transfer rates with system
frequency up to 1066 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL-1,CL-2
Programmable CAS WRITE latency (CWL) based
on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or
Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT)
SEPTEMBER 2016
Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8
only)
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Up to 200 MHz in DLL off mode
Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)
OPTIONS
Configuration:
512Mx8
256Mx16
Package:
96-ball BGA (9mm x 13mm) for x16
78-ball BGA (9mm x 10.5mm) for x8
ADDRESS TABLE
Parameter
Row Addressing
Column Addressing
Bank Addressing
Page size
Auto Precharge
Addressing
BL switch on the fly
512Mx8
A0-A15
A0-A9
BA0-2
1KB
A10/AP
A12/BC#
256Mx16
A0-A14
A0-A9
BA0-2
2KB
A10/AP
A12/BC#
SPEED BIN
Speed Option
15H
125K
107M
JEDEC Speed Grade DDR3-1333H DDR3-1600K DDR3-1866M
CL-nRCD-nRP
9-9-9
11-11-11
13-13-13
tRCD,tRP(min)
13.5
13.75
13.91
Note:Faster speed options are backward compatible to slower speed options.
093N
DDR3-2133N
14-14-14
13.09
Units
tCK
ns
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised
to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product
can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use
in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. www.issi.com
Rev. G2
07/28/2016
1

1 Page





IS46TR85120A pdf, ピン配列
IS43/46TR16256A, IS43/46TR16256AL,
IS43/46TR85120A, IS43/46TR85120AL
1.2 DDR3 SDRAM package ballout 96-ball BGA x16
1 23
A VDDQ DQU5 DQU7
B
VSSQ
VDD
VSS
C VDDQ DQU3 DQU1
D VSSQ VDDQ DMU
E
VSS
VSSQ DQL0
F VDDQ DQL2 DQSL
G VSSQ DQL6 DQSL#
H VREFDQ VDDQ DQL4
J
NC
VSS
RAS#
K
ODT
VDD CAS#
L NC CS# WE#
M
VSS
BA0 BA2
N
VDD
A3
A0
P
VSS
A5
A2
R
VDD
A7
A9
T VSS RESET# A13
4
5
6
Note:
NC balls have no internal connection. NC(A15) is an NC pin and reserved for higher densities.
7
DQU4
DQSU#
DQSU
DQU0
DML
DQL1
VDD
DQL7
CK
CK#
A10/AP
NC(A15)
A12/BC#
A1
A11
A14
8
VDDQ
DQU6
DQU2
VSSQ
VSSQ
DQL3
VSS
DQL5
VSS
VDD
ZQ
VREFCA
BA1
A4
A6
A8
9
VSS
VSSQ
VDDQ
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
Integrated Silicon Solution, Inc. www.issi.com
Rev. G2
07/28/2016
3


3Pages


IS46TR85120A 電子部品, 半導体
IS43/46TR16256A, IS43/46TR16256AL,
IS43/46TR85120A, IS43/46TR85120AL
2. FUNCTION DESCRIPTION
2.1 Simplified State Diagram
Power
applied
Power
On
Reset
Procedure
From
Any state RESET
Initialization
MRS,MPR,
Write
Leveling
ZQCL
ZQ
Calibration
ZQCL
ZQCS
Idle
SRE
SRX
REF
Self
Refresh
Refreshing
Write
Active
Power
Down
PDX
PDE
ACT
PDE
PDX
Activating
Writing
Write
Bank
Active
Read
Write A Read A
Read
Write
Precharge
Power
Down
Reading
Read
Write A
Writing
Write A Read A
PRE,PREA
PRE,PREA PRE,PREA
Read A
Reading
Abbreviation
ACT
PRE
PREA
MRS
REF
ZQCL
Function
Active
Precharge
Precharge All
Mode Register Set
Refresh
ZQ Calibration Long
Abbreviation
Read
Read A
Write
Write A
RESET
ZQCS
Precharging
Function
RD, RDS4, RDS8
RDA, RDAS4, RDAS8
WR, WRS4, WRS8
WRA, WRAS4, WRAS8
Start RESET Procedure
ZQ Calibration Short
Automatic
Sequence
Command
Sequence
Abbreviation
PDE
PDX
SRE
SRX
MPR
Function
Enter Power-down
Exit Power-down
Self-Refresh entry
Self-Refresh exit
Multi-Purpose Register
Integrated Silicon Solution, Inc. www.issi.com
Rev. G2
07/28/2016
6

6 Page



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部品番号部品説明メーカ
IS46TR85120A

4Gb DDR3 SDRAM

ISSI
ISSI
IS46TR85120AL

4Gb DDR3 SDRAM

ISSI
ISSI


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