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NTMFS4955NT1G の電気的特性と機能

NTMFS4955NT1GのメーカーはON Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 NTMFS4955NT1G
部品説明 Power MOSFET ( Transistor )
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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NTMFS4955NT1G Datasheet, NTMFS4955NT1G PDF,ピン配置, 機能
NTMFS4955N
Power MOSFET
30 V, 48 A, Single NChannel, SO8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Optimized for 5 V, 12 V Gate Drives
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C
TA = 100°C
TA = 25°C
TA = 25°C
TA = 100°C
VDSS
VGS
ID
PD
ID
30
±20
16.7
10.5
2.70
25.2
15.9
V
V
A
W
A
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
6.16 W
9.7 A
6.2
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC =100°C
PD
ID
0.92 W
48 A
30
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TA = 25°C, tp = 10 ms
PD
IDM
23.2 W
210 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 26 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
100
55 to
+150
21
6.0
34
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2013
December, 2013 Rev. 7
1
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
5.6 mW @ 10 V
8.5 mW @ 4.5 V
D (5,6)
ID MAX
48 A
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4955N
AYWZZ
D
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NTMFS4955NT1G
Package
SO8 FL
(PbFree)
Shipping
1500 /
Tape & Reel
NTMFS4955NT3G SO8 FL
(PbFree)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4955N/D

1 Page





NTMFS4955NT1G pdf, ピン配列
NTMFS4955N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
DRAINSOURCE DIODE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
7.4
27.5
20.3
4.1
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
0.86
0.75
25.8
12.4
13.4
13.6
1.1
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
1.00
0.005
1.84
1.0
2.2
Unit
ns
V
ns
nC
nH
nH
nH
W
http://onsemi.com
3


3Pages


NTMFS4955NT1G 電子部品, 半導体
NTMFS4955N
TYPICAL CHARACTERISTICS
100
D = 0.5
10
0.2
0.1
0.05
1 0.02
0.01
0.1
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t, TIME (s)
Figure 13. Thermal Response
10 100 1000
http://onsemi.com
6

6 Page



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部品番号部品説明メーカ
NTMFS4955NT1G

Power MOSFET ( Transistor )

ON Semiconductor
ON Semiconductor


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