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KM23C4000DTY の電気的特性と機能

KM23C4000DTYのメーカーはSamsung semiconductorです、この部品の機能は「4M-Bit (512Kx8) CMOS MASK ROM」です。


製品の詳細 ( Datasheet PDF )

部品番号 KM23C4000DTY
部品説明 4M-Bit (512Kx8) CMOS MASK ROM
メーカ Samsung semiconductor
ロゴ Samsung semiconductor ロゴ 




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KM23C4000DTY Datasheet, KM23C4000DTY PDF,ピン配置, 機能
KM23C4000D(E)TY
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
524,288 x 8 bit organization
Access time : 80ns(Max.)
Supply voltage : single +5V
Current consumption
Operating : 50mA(Max.)
Standby : 50µA(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. KM23C4000D(E)TY : 32-TSOP1-0820
CMOS MASK ROM
GENERAL DESCRIPTION
The KM23C4000D(E)TY is a fully static mask programmable
ROM organized 524,288 x 8bit. It is fabricated using silicon
gate CMOS process technology.
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23C4000D(E)TY is packaged in a 32-TSOP1.
FUNCTIONAL BLOCK DIAGRAM
A18
.
.
.
.
.
.
.
.
A0
X
BUFFERS
AND
DECODER
Y
BUFFERS
AND
DECODER
MEMORY CELL
MATRIX
(524,288x8)
SENSE AMP.
BUFFERS
PRODUCT INFORMATION
Product
Operating Vcc Range Speed
Temp Range (Typical) (ns)
KM23C4000DTY
KM23C4000DETY
0°C~70°C
-20°C~85°C
5.0V
80
PIN CONFIGURATION
CE CONTROL
OE LOGIC
...
Q0 Q7
Pin Name
A0 - A18
Q0 - Q7
CE
OE
VCC
VSS
N.C
Pin Function
Address Inputs
Data Outputs
Chip Enable
Output Enable
Power(+5V)
Ground
No Connection
A11
A9
A8
A13
A14
A17
N.C
VCC
A18
A16
A15
A12
A7
A6
A5
A4
#1
#16
32-TSOP1
KM23C4000D(E)TY
#32
#17
OE
A10
CE
Q7
Q6
Q5
Q4
Q3
VSS
Q2
Q1
Q0
A0
A1
A2
A3

1 Page





KM23C4000DTY pdf, ピン配列
KM23C4000D(E)TY
CMOS MASK ROM
AC CHARACTERISTICS(VCC=5V±10%, unless otherwise noted.)
TEST CONDITIONS
Item
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Levels
Output Loads
Value
0.6V to 2.4V
10ns
0.8V and 2.0V
1 TTL Gate and CL=100pF
READ CYCLE
Item
KM23C4000D(E)TY-8 KM23C4000D(E)TY-10 KM23C4000D(E)TY-12
Symbol
Min Max Min Max Min Max
Read Cycle Time tRC 80 100 120
Chip Enable Access Time
tACE
80
100 120
Address Access Time
tAA
80
100 120
Output Enable Access Time
tOE
40
50
60
Output or Chip Disable to
Output High-Z
tDF
20
20
20
Output Hold from Address Change tOH
0
0
0
Unit
ns
ns
ns
ns
ns
ns
TIMING DIAGRAM
READ
ADD
CE
OE
DOUT
ADD1
tACE
tRC
tOE
ADD2
tAA
VALID DATA
tOH
VALID DATA
tDF(Note)
NOTE : tDF is defined as the time at which the outputs achieve the open circuit condition and is not referenced to VOH or
VOL level.


3Pages





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共有リンク

Link :


部品番号部品説明メーカ
KM23C4000DTY

4M-Bit (512Kx8) CMOS MASK ROM

Samsung semiconductor
Samsung semiconductor


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