|
|
PDF STT3998N Data sheet ( Hoja de datos )
| Número de pieza | STT3998N | |
| Descripción | Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | SeCoS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STT3998N (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Elektronische Bauelemente
STT3998N
Dual N-Ch Enhancement Mode Mos.FET
3.7 A, 20 V, RDS(ON) 58 m
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density
trench process to provide low RDS(on) and to ensure minimal power
loss and heat dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
FEATURES
Low RDS(on) provide higher efficiency and extends battery
life.
Low thermal impedance copper leadframe TSOP-6 saves
board space.
Fast switching speed.
High performance trench technology.
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V)
20
RDS(on) (m
58@VGS= 4.5V
82@VGS= 2.5V
ID(A)
3.7
3.1
TSOP-6
A
E
L
654
B
123
F
DG
K
C
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
GD
SS
GD
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
Operating Junction and Storage Temperature Range
TA= 25°C
TA= 70°C
TA= 25°C
TA= 70°C
Symbol
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Ratings
Maximum
20
±12
3.7
2.9
8
1.05
1.15
0.7
-55 ~ 150
Unit
V
V
A
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient a
Notes
t ≦ 10 sec
Steady State
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
27-Aug-2010 Rev. A
Symbol
RJA
Typ. Max.
93 110
130 150
Unit
°C / W
Any changes of specification will not be informed individually.
Page 1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet STT3998N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STT3998N | Dual N-Channel Enhancement Mode MOSFET | SeCoS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |