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SST11CP15E の電気的特性と機能

SST11CP15EのメーカーはMicrochipです、この部品の機能は「4.9-5.9 GHz High-Linearity Power Amplifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 SST11CP15E
部品説明 4.9-5.9 GHz High-Linearity Power Amplifier
メーカ Microchip
ロゴ Microchip ロゴ 




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SST11CP15E Datasheet, SST11CP15E PDF,ピン配置, 機能
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Data Sheet
The SST11CP15E is a versatile power amplifier designed for 802.11a/n/ac
embedded applications and is based on the highly-reliable InGaP/GaAs HBT
technology. It is easily configured for high-linearity, high-efficiency applications
over a wide temperature range while operating over the 4.9-5.9 GHz frequency
band. The SST11CP15E has excellent linearity while meeting 802.11a spectrum
mask at 23 dBm with a 3.3V power supply, and at 24.5 dBm with a 5.0V supply.
It provides up to 18 dm, at 3% EVM with 802.11a 54 Mbps, and up to 16 dBm, at
1.8% EVM with 802.11ac 351 Mbps Modulation and 3.3V bias. The power ampli-
fier requires only a 4mA reference current for on/off control. It includes a VSWR/
temperature insensitive, linear power detector. The SST11CP15E is offered in a
12-contact UQFN package.
Features
• Small package size
– 12-contact UQFN (2mm x 2mm x 0.6mm max thick-
ness)
• Wide operating voltage range
– VCC = 3.0–5.0V
• High linear output power, 802.11a/n/ac:
– Spectrum mask compliant using 802.11a OFDM
- Up to 24 dBm at 5.0V
- Up to 22 dBm at 3.3V
– Spectrum mask compliant using 802.11n MCS7, 40 MHz
- Up to 22 dBm at 5.0V
- Up to 19 dBm at 3.3V
– ~3% EVM across 5.1-5.9 GHz for 54 Mbps 802.11a
- Up to 20 dBm at 5.0V VCC
- Up to 18 dBm at 3.3V VCC
– 1.8% EVM across 5.1-5.9 GHz for 351 Mbps 802.11ac
- Up to 16 dBm at 3.3V VCC
• High power-added efficiency/low operating current
for 54 Mbps 802.11a applications
– ~10% @ POUT = 19 dBm for 54 Mbps, 3.3V VCC
• Gain:
– Typically >26 dB gain across broadband
4.9-5.9 GHz, 3.3V VCC
• Low idle current
– ~140 mA ICQ, 3.3 V VCC
• High speed power-up/-down
– Turn on/off time (10%~90%) <100 ns
• Low shut-down current (<1 µA)
• On-chip power detector with -20 dB linear dynamic
range
– Temperature Stable
– VSWR insensitive
• 50Ω on-chip input match and simple output match
• Packages available
– 12-pin QFN 2mm x 2mm x 0.55mm
• All lead-free devices are RoHS compliant
Applications
• WLAN (IEEE 802.11a/n/ac)
• Japan WLAN
• HyperLAN2
• Multimedia
• WiMax
©2013 Silicon Storage Technology, Inc.
www.microchip.com
DS70005025C
05/13

1 Page





SST11CP15E pdf, ピン配列
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Functional Blocks
Data Sheet
12 11 10
RFIN 1
Input
Match
VCCb 2
VREF1 3
Bias
Control
9 GND
8 RFOUT
Power
Detection
7 NC
4 56
Figure 1: Functional Block Diagram
75025 B1.0
©2013 Silicon Storage Technology, Inc.
3
DS70005025C
05/13


3Pages


SST11CP15E 電子部品, 半導体
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Electrical Specifications
Data Sheet
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications. Refer to Figures 8 through 7 for 3.3V VCC RF performance and Figures 8 through 11 for
5.0V VCC RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Supply Voltage at pins 2, 10, 11, 12 (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +5.5V
DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (TA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20ºC to +85ºC
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150ºC
Maximum Output Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 dBm
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Table 2: Operating Range
Range
Industrial
Ambient Temp
-20°C to +85°C
VCC
3.3V-5.0V
T2.1 75025
Table 3: DC Electrical Characteristics
Symbol
VCC
ICC
ICQ
IOFF
VREG
Parameter
Supply Voltage at pins 2, 10, 11, 12
Supply Current @ POUT = 18 dBm
VCC = 3.3V
VCC = 4.2V
VCC3 = 5.0V, VCC1,2 = 3.3V
VCC Quiescent Current
VCC = 3.3V
VCC = 4.2V
VCC3 = 5.0V, VCC1,2 = 3.3V
Shut down current
Recommended Reference Voltage
VCC = 3.3V
VCC3 = 5.0V, VCC1,2 = 3.3V
Min. Typ Max. Unit
3.0 3.3 5.0
V
220 mA
250 mA
290 mA
135
170
195
1.0 10
2.85
mA
mA
mA
µA
V
2.90
V
T3.0 75025
©2013 Silicon Storage Technology, Inc.
6
DS70005025C
05/13

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
SST11CP15

4.9-5.8 GHz High-Linearity Power Amplifier

Silicon Storage Technology
Silicon Storage Technology
SST11CP15E

4.9-5.9 GHz High-Linearity Power Amplifier

Microchip
Microchip


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