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SST11CP15 の電気的特性と機能

SST11CP15のメーカーはSilicon Storage Technologyです、この部品の機能は「4.9-5.8 GHz High-Linearity Power Amplifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 SST11CP15
部品説明 4.9-5.8 GHz High-Linearity Power Amplifier
メーカ Silicon Storage Technology
ロゴ Silicon Storage Technology ロゴ 




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SST11CP15 Datasheet, SST11CP15 PDF,ピン配置, 機能
4.9-5.8 GHz High-Linearity Power Amplifier
SST11CP15
FEATURES:
• Small Package Size
• High Linear Output Power:
– 802.11a OFDM Spectrum mask compliance up
to 23 dBm
– Added EVM~2.5% up to 18 dBm, typically,
across 5.1-5.8 GHz for 54 Mbps 802.11a signal
• High Power-added Efficiency/Low Operating
Current for 54 Mbps 802.11a Applications
– ~11% @ POUT = 19 dBm for 54 Mbps
• Gain:
– Typically 26 dB gain across broadband
4.9-5.8 GHz
• Low Idle Current
– ~120 mA ICQ
• High Speed Power-up/-down
– Turn on/off time (10%~90%) <100 ns
• Low Shut-down Current (<1 µA)
• On-chip Power Detection
• 20 dB Dynamic Range On-chip Power Detection
• 50Ω On-chip Input Matching and Simple Output
Matching
• Packages Available
– 12-contact UQFN (2mm x 2mm x 0.6mm max
thickness)
APPLICATIONS:
• WLAN (IEEE 802.11a/n)
• Japan WLAN
• HyperLAN2
• Multimedia
Data Sheet
PRODUCT DESCRIPTION
The SST11CP15 is a high-linearity power amplifier that has
low power consumption and is based on the highly-reliable
InGaP/GaAs HBT technology.
The SST11CP15 can be easily configured for high-linearity,
high-efficiency applications with superb power-added effi-
ciency while operating over the entire 802.11a frequency
band for U.S., European, and Japanese markets (4.9-5.8
GHz).
The SST11CP15 has excellent linearity, typically ~2.5%
added EVM at 18 dBm output power which is essential for
54 Mbps 802.11a operation while meeting 802.11a spec-
trum mask at 23 dBm. SST11CP15 also has wide-range,
single-ended power detectors which lower users’ cost on
power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control. Low
reference current (total IREF <5 mA) makes the
SST11CP15 controllable by an on/off switching signal
directly from the baseband chip. These features coupled
with low operating current make the SST11CP15 ideal for
the final stage power amplification in battery-powered
802.11a WLAN transmitter and access point applications.
The SST11CP15 is offered in 12-contact UQFN package
with 0.6 mm maximum thickness. See Figure 2 for pin
assignments and Table 1 for pin descriptions.
©2011 Silicon Storage Technology, Inc.
S71428-01-000
01/11
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

1 Page





SST11CP15 pdf, ピン配列
4.9-5.8 GHz High-Linearity Power Amplifier
SST11CP15
PIN ASSIGNMENTS
Data Sheet
12 11 10
RFIN 1
VCCb 2
VREF1 3
Top View
(Contacts facing down)
RF and DC GND
0
9 GND
8 RFOUT
7 NC
4 56
FIGURE 2: Pin Assignments for 12-contact UQFN
1428 P1.0
PIN DESCRIPTIONS
TABLE 1: Pin Description
Symbol
GND
Pin No.
0
Pin Name
Ground
RFIN
VCCb
VREF1
VREF2
VREF3
DET
NC
RFOUT
GND
VCC3
VCC2
VCC1
1
2
3
4
5
6
7
8
9
10
11
12
1. I=Input, O=Output
Power Supply
No Connection
Ground
Power Supply
Power Supply
Power Supply
©2011 Silicon Storage Technology, Inc.
Type1
I
PWR
PWR
PWR
PWR
O
O
PWR
PWR
PWR
Function
The center pad should be connected to RF ground
with several low inductance, low resistance vias.
RF input, DC decoupled
Supply voltage for bias circuit
Current Control
Current Control
Current Control
On-chip power detector
Unconnected pin
RF Output
Ground (NC is acceptable)
Power supply, 3rd stage
Power supply, 2nd stage
Power supply, 1st stage
T1.1 1428
S71428-01-000
01/11
3


3Pages


SST11CP15 電子部品, 半導体
Data Sheet
4.9-5.8 GHz High-Linearity Power Amplifier
SST11CP15
Power Gain versus Output Power
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
10 11 12 13 14 15 16 17
Output Power (dBm)
FIGURE 5: Power Gain versus Output Power
Freq=4.9 GHz
Freg=5.1 GHz
Freq=5.5 GHz
Freq=5.825 GHz
18 19 20 21
1428 F7.1
Maximum Mask Compliance
Spectrum Mask 802.11a (5500MHz)
0
-10
-20
-30
-40
-50
-60
-70
-80
5.45
5.5
Frequency(GHz)
FIGURE 6: Frequency = 5.5 GHz at POUT = 23.3 dBm with ICC = 390 mA
Spectrum
Relative limit
5.55
1428 F6.0
©2011 Silicon Storage Technology, Inc.
6
S71428-01-000
01/11

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
SST11CP15

4.9-5.8 GHz High-Linearity Power Amplifier

Silicon Storage Technology
Silicon Storage Technology
SST11CP15E

4.9-5.9 GHz High-Linearity Power Amplifier

Microchip
Microchip
SST11CP16

5.1-5.9 GHz High-Linearity Power Amplifier

Microchip
Microchip


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