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PDF FTA10N60GZ Data sheet ( 特性 )

部品番号 FTA10N60GZ
部品説明 600V N-Channel MOSFET
メーカ ark
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FTA10N60GZ Datasheet, FTA10N60GZ PDF,ピン配置, 機能
600V N-Channel MOSFET
General Features
Low ON Resistance
Low Gate Charge (typical 54nC)
Fast Switching
100% Avalanche Tested
RoHS Compliant
Halogen-free available
Applications
High Efficiency SMPS
Adaptor/Charger
Active PFC
LCD Panel Power
FTP10N60/FTA10N60
BVDSS
600V
RDS(ON) (Max.)
0.75
ID
10.0A
Ordering Information
Part Number Package
FTP10N60
TO-220
FTP10N60G
TO-220
FTA10N60
TO-220F
FTA10N60G
TO-220F
FTA10N60Z
TO-220FG
FTA10N60GZ TO-220FG
Marking
FTP10N60
FTP10N60G
FTA10N60
FTA10N60G
FTA10N60Z
FTA10N60GZ
Remark
RoHS
Halogen-free
RoHS
Halogen-free
RoHS
Halogen-free
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-to-Source Voltage[1]
ID Continuous Drain Current
ID@100Continuous Drain Current
IDM Pulsed Drain Current, VGS@10V[2]
Power Dissipation
PD Derating Factor above 25
TC=25unless otherwise specified
FTP10N60
FTA10N60
Unit
600 V
10.0 10.0*
Figure 3
A
Figure 6
156 50 W
1.25 0.4 W/
VGS
EAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche
Energy L=12mH, ID=10A
Peak Diode Recovery dv/dt[3]
±30 V
600 mJ
4.5 V/ns
TL
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
300
TJ and TSTG Operating and Storage Temperature Range
-55 to 150
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o . c o m
1 / 11
Rev. 2.1 May. 2012

1 Page





FTA10N60GZ pdf, ピン配列
Source-Drain Diode Characteristics
Symbol
Parameter
ISD
Continuous Source Current (Body
Diode)
ISM
Maximum Pulsed Current(Body
Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
FTP10N60/FTA10N60
TC=25unless otherwise specified
Min Typ. Max. Units
Test Conditions
-- -- 10 A
Integral P-N diode in
-- -- 40 A
MOSFET
-- -- 1.2 V
IS=10A, VGS=0V
-- 337 -- ns
VGS=0V
-- 2.79 -- uC IF=10A,di/dt=100A/µs
NOTE
[1] TJ=+25to +150
[2] Repetitive rating, pulse width limited by maximum junction temperature.
[3] ISD=10A, di/dt100A/µs, VDDBVDSS, TJ=+150
[4] Pulse width380µs; duty cycle2%.
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o . c o m
3 / 11
Rev. 2.1 May. 2012


3Pages


FTA10N60GZ 電子部品, 半導体
FTP10N60/FTA10N60
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o . c o m
6 / 11
Rev. 2.1 May. 2012

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