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FTP10N60C の電気的特性と機能

FTP10N60CのメーカーはIPSです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FTP10N60C
部品説明 N-Channel MOSFET
メーカ IPS
ロゴ IPS ロゴ 




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FTP10N60C Datasheet, FTP10N60C PDF,ピン配置, 機能
FTP10N60C
FTA10N60C
N-Channel MOSFET
Pb Lead Free Package and Finish
Applications:
• Adaptor
• TV Main Power
• SMPS Power Supply
• LCD Panel Power
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
Ordering Information
PART NUMBER
FTP10N60C
FTA10N60C
PACKAGE
TO-220
TO-220F
VDSS
600 V
RDS(ON) (Max.)
0.85
ID
10 A
D
BRAND
FTP10N60C
FTA10N60C
GDS
TO-220 G DS
TO-220F
Packages
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP10N60C FTA10N60C
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
600
10.0 10.0*
Figure 3
Figure 6
216 50
1.72 0.40
V
A
W
W/ oC
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=6.7 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30
225
Figure 8
3.0
V
mJ
A
V/ ns
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 150
oC
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
FTP10N60C FTA10N60C
0.58 2.5
62 100
Units
oC/W
Test Conditions
Drain lead soldered to water cooled heatsink, PD ad-
justed for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2007 InPower Semiconductor Co., Ltd.
FTP10N60C/FTA10N60C REV. A. Oct. 2007

1 Page





FTP10N60C pdf, ピン配列
Source-Drain Diode Characteristics Tc=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current (Body Diode)
--
-- 10
A
ISM
Maximum Pulsed Current (Body Diode)
-- -- 40
A
VSD Diode Forward Voltage
-- -- 1.5 V
trr Reverse Recovery Time
-- 352 528
ns
Qrr Reverse Recovery Charge
-- 2.9 4.35 nC
Test Conditions
Integral pn-diode
in MOSFET
IS=10A, VGS=0V
VGS=0 V
IF=10A, di/dt=100 A/µs
Notes:
*1. TJ = +25 oC to +150 oC.
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD= 10 A, di/dt < 100 A/µs, VDD < BVDSS, TJ=+150 oC.
*4. Pulse width < 380µs; duty cycle < 2%.
©2007 InPower Semiconductor Co., Ltd.
FTP10N60C/FTA10N60C REV. A . Oct. 2007
Page 3 of 9


3Pages


FTP10N60C 電子部品, 半導体
Figure 11. Typical Breakdown Voltage vs
Junction Temperature
1.15
1.10
1.05
1.00
0.95
VGS = 0V
ID = 250 µA
0.90
-75 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (oC)
Figure 13.
100.0
Maximum Forward Bias Safe
Operating Area
10µs
10.0
100µ
1.0
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
TJ = MAX RATED
0.1 TC = 25 oC
1
10
1ms
10ms
100 1000
VDS, Drain-to-Source Voltage (V)
Figure 15. Typical Gate Charge
vs Gate-to-Source Voltage
12
10
VDS = 163V
8
VDS = 325V
VDS = 488V
6
4
2
ID = 10A
0
0 5 10 15 20 25 30 35 40 45
QG , Total Gate Charge (nC)
©2007 InPower Semiconductor Co., Ltd.
Figure 12. Typical Threshold Voltage vs
Junction Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6 VGS = VDS
ID = 250 µA
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (oC)
Figure 14. Typical Capacitance vs
Drain-to-Source Voltage
10000
1000
Ciss
100
10
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd
Coss Cds + Cgd
Crss = Cgd
1
0.1 1
10
Coss
Crss
100
VDS, Drain Voltage (V)
1000
Figure 16. Typical Body Diode Transfer
Characteristics
60
50
40
30 +150 oC
+25 oC
20
10
0
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
FTP10N60C/FTA10N60C REV. A . Oct. 2007
Page 6 of 9

6 Page



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