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What is FTP08N06A?

This electronic component, produced by the manufacturer "IPS", performs the same function as "N-Channel MOSFET".


FTP08N06A Datasheet PDF - IPS

Part Number FTP08N06A
Description N-Channel MOSFET
Manufacturers IPS　
Logo IPS Logo　


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FTP08N06A
N-Channel MOSFET
Applications:
• Automotive
• DC Motor Control
• Class D Amplifier
• Uninterruptible Power Supply (UPS)
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP08N06A
PACKAGE
TO-220
BRAND
FTP08N06A
Pb Lead Free Package and Finish
VDSS
55V
RDS(ON) (Max.)
8 mΩ
ID
120A
D
G
DS
TO-220
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=0.27 mH, ID=75 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
FTP08N06A
55
120*
Figure 3
Figure 6
230
1.54
± 20
760
Figure 8
5.0
300
260
-55 to 175
Units
V
A
W
W/ oC
V
mJ
V/ ns
oC
*Drain Current limited by Maximum Package Current Rating, 75 Amps.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
©2009 InPower Semiconductor Co., Ltd.
Min. Typ. Max.
-- -- 0.65
-- -- 62
Page 1 of 11
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175oC.
1 cubic foot chamber, free air.
FTP08N06A REV. A Nov. 2009

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FTP08N06A equivalent
Figure 6. Maximum Peak Current Capability
1000
TRANSCONDUCTANCE
100 MAY LIMIT CURRENT IN
THIS REGION
10
VGS = 10V
1
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25 1---5---0-1---2-–--5---T---C-
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
140
PULSE DURATION = 10 µs
120
DUTY CYCLE = 0.5% MAX
TC=25°C
100
80
60
40 +175 oC
+25 oC
20 -55 oC
0
3.0
4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Figure 8. Unclamped Inductive Switching
Capability
1000
100
STARTING TJ = 25 oC
STARTING TJ = 150 oC
10
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
1
1E-6
10E-6
100E-6
1E-3
tAV, Time in Avalanche (s)
10E-3
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
0.014
0.012
PULSE DURATION = 10 µs
DUTY CYCLE = 0.5% MAX
TC=25°C
0.010
0.008
VGS = 10V
0.006
0
50 100 150 200
ID, Drain Current (A)
250
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-75 -50 -25 0
PULSE DURATION = 10 µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 60A
25 50 75 100 125 150 175
TJ, Junction Temperature (oC)
©2009 InPower Semiconductor Co., Ltd.
Page 5 of 11
FTP08N06A REV. A Nov. 2009


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FTP08N06A mosfet datasheet


1. - 55V, 120A, MOSFET (Transistor)

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Featured Datasheets

Part NumberDescriptionMFRS
FTP08N06The function is N-Channel MOSFET. InPower SemiconductorInPower Semiconductor
FTP08N06AThe function is N-Channel Enhancement. IPSIPS
FTP08N06AThe function is N-Channel MOSFET. IPSIPS

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