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G8605-22のメーカーはHamamatsu Corporationです、この部品の機能は「InGaAs PIN photodiode」です。 |
部品番号 | G8605-22 |
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部品説明 | InGaAs PIN photodiode | ||
メーカ | Hamamatsu Corporation | ||
ロゴ | |||
このページの下部にプレビューとG8605-22ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
PHOTODIODE
InGaAs PIN photodiode
G8605 series
Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response
InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D*. One-stage (-10 ˚C)
and two-stage (-20 ˚C) thermoelectrically cooled types are provided.
Features
l High-speed response
l Low noise
l Various active area sizes available from φ1 to φ5 mm
Applications
l Optical power meter
l Water content analyzer
l Laser diode life test
s Specifications / Absolute maximum ratings
Type No.
D im ensional
outline/
W indow
Package
m aterial *
Cooling
G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25
➀/K
One-stage
TE-cooled
TO-8
➁/K
Two-stage
TE-cooled
Active
area
(mm)
φ1
φ2
φ3
φ5
φ1
φ2
φ3
φ5
Accessories (Optional)
l Preamp for InGaAs PIN photodiode
C4159-02
(High-speed type)
l Preamp for InGaAs PIN photodiode
C4159-03
(High sensitivity type)
l Heatsink for one-stage TE-cooled type A3179
l Heatsink for two-stage TE-cooled type A3179-01
l Temperature controller for TE-cooled type C1103-04
Thermistor
power
dissipation
(mW)
0.2
Absolute maximum ratings
TE-cooler Reverse Operating Storage
allowable voltage temperature temperature
current VR Max. Topr
Tstg
(A) (V) (°C)
(°C)
5
1.5
5
5
2
5
-40 to +70 -55 to +85
1.0
5
5
2
s Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25
M eas urem ent
condition
S
re
pectral
sponse
Peak
sensitivity
Element ran ge w avelength
temperature λ
λp
Photo
sensitivity
S
1.3 µ m λ=λp
(°C) (µm) (µm) (A /W ) (A /W )
-10 0.9 to 1.67
1.55 0.9 0.95
-20 0.9 to 1.65
Dark current
ID
VR=1 V
Typ. Max.
(nA) (nA)
0.07 0.35
0.3 1.5
15
2.5 12.5
0.03 0.15
0.15 0.75
0.5 2.5
1.2 6
Cut-off
frequency
fc
VR=1 V
RL=50 Ω
(MHz)
18
4
2
0.6
18
4
2
0.6
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
resistance
Rsh
VR=10 mV
D∗
λ=λp
NEP
λ=λp
(pF)
150
550
1000
3500
150
550
1000
3500
(MΩ)
1500
300
100
30
3000
600
200
60
(cm ·H z1/2/W ) (W/Hz1/2)
5 × 10-15
2 × 1013
1 × 10-14
2 × 10-14
3 × 10-14
3 × 10-15
3 × 1013
7 × 10-15
1 × 10-14
2 × 10-14
* Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)
1
1 Page s Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 ˚C, f=1 MHz)
G8605-15/-25
1 nF
G8605-12/-22
G8605-13/-23
100 pF
G8605-11/-21
10 pF
1 pF
0.01
0.1
1
10 100
REVERSE VOLTAGE (V)
KIRDB0243EA
In applications requiring high-speed
response, the lead length should be as
short as possible to minimize the termi-
nal capacitance.
s Thermistor temperature characteristic
106 (Typ.)
105
104
103
-40 -20 0 20
ELEMENT TEMPERATURE (˚C)
KIRDB0116EA
s Current vs. voltage characteristics of TE-cooler
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
1.6
1.4
1.2 ONE-STAGE
TE-COOLED TYPE
1.0
0.8
0.6
TWO-STAGE
0.4 TE-COOLED TYPE
0.2
0
0 0.5 1.0 1.5
VOLTAGE (V)
KIRDB0115EA
InGaAs PIN photodiode G8605 series
s Shunt resistance vs. element temperature
10 GΩ
(Typ. VR=10 mV)
1 GΩ
100 MΩ
10 MΩ G8605-13/-23
1 MΩ
G8605-15/-25
G8605-11/-21
G8605-12/-22
100 kΩ
-40 -20 0 20 40 60
ELEMENT TEMPERATURE (˚C)
80
KIRDB0244EA
s Cooling characteristics of TE-cooler
40 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
20
ONE-STAGE
TE-COOLED TYPE
0
-20
TWO-STAGE
-40 TE-COOLED TYPE
-60
0
0.4 0.8 1.2
CURRENT (A)
1.6
KIRDB0231EA
3
3Pages | |||
ページ | 合計 : 4 ページ | ||
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部品番号 | 部品説明 | メーカ |
G8605-21 | InGaAs PIN photodiode | Hamamatsu Corporation |
G8605-22 | InGaAs PIN photodiode | Hamamatsu Corporation |
G8605-23 | InGaAs PIN photodiode | Hamamatsu Corporation |
G8605-25 | InGaAs PIN photodiode | Hamamatsu Corporation |