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PDF G8376-05 Data sheet ( Hoja de datos )
| Número de pieza | G8376-05 | |
| Descripción | InGaAs PIN photodiode | |
| Fabricantes | Hamamatsu Corporation | |
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PHOTODIODE
InGaAs PIN photodiode
G8376 series
Standard type
InGaAs PIN photodiodes are NIR (near infrared) detectors that feature high-speed response and low noise. Various active area sizes are
provided to meet wide applications.
Features
l Low noise, low dark current
l Low terminal capacitance
l 3-pin TO-18 package
Applications
l NIR (near infrared) photometry
l Optical communication
s Specifications / Absolute maximum ratings
Type No. Window material Package
G8376-01
G8376-02
G8376-03
G8376-05
Borosilicate glass
with anti-reflective
coating (optimized
for 1.55 µ m peak)
TO-18
Active area
(mm)
φ0.04
φ0.08
φ0.3
φ0.5
Absolute maximum ratings
Reverse
Operating
Storage
voltage
temperature
temperature
VR
Topr
Tstg
(V) (°C) (°C)
20
-40 to +85
-55 to +125
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Spectral
response
range
(µm)
Peak
sensitivity
wavelength
λp
Photo
sensitivity
S
Dark
current
ID
VR=5 V
Cut-off
frequency
fc
VR=2 V
RL=50 Ω
1.3 µm λ=λp Typ. Max. -3 dB
(µm) (A/W) (A/W) (nA) (nA) (MHz)
Terminal
capacitance Shunt
Ct
VR=5 V
f=1 MHz
resistance
Rsh
VR=10 mV
D∗
λ=λp
(pF) (MΩ) (c m· Hz1/2/ W)
G8376-01
0.06 0.3 3000
0.5 10000
G8376-02
G8376-03
0.9 to 1.7 1.55
0.08 0.4
0.9 0.95
0.3 1.5
2000
400 *
1
5
8000
1000
5 × 1012
G8376-05
0.5 2.5 200 *
12
300
* VR=5 V
NEP
λ=λp
(W/Hz1/2)
2 × 10-15
2 × 10-15
4 × 10-15
8 × 10-15
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet G8376-05.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| G8376-01 | InGaAs PIN photodiode | Hamamatsu Corporation |
| G8376-02 | InGaAs PIN photodiode | Hamamatsu Corporation |
| G8376-03 | InGaAs PIN photodiode | Hamamatsu Corporation |
| G8376-05 | InGaAs PIN photodiode | Hamamatsu Corporation |
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