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PDF HD8205A Data sheet ( Hoja de datos )
| Número de pieza | HD8205A | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | HI-DEVICE | |
| Logotipo |  |
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HD8205A
N-Channel Enhancement Mode Power MOSFET
Description
The HD8205A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
● VDS = 20V, ID = 6A
RDS(ON) < 34mΩ @ VGS=2.5V
RDS(ON) < 24mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D1
G1
G2
D2
S1 S2
Schematic diagram
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
TSSOP-8 top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±10
6
25
1.5
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=19.5V,VGS=0V
Min Typ Max Unit
20 21
--
-
1
V
μA
1
1 page  
HD8205A
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HD8205A.PDF ] | |
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